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Optimization of Samarium Oxide Deposition on Gallium Arsenide

Published online by Cambridge University Press:  01 February 2011

Anthony Duane Stewart ,
Andrew G Scheuermann ,
Andy P Gerger ,
Brent P Gila ,
Cammy R Abernathy  and
Stephen J Pearton
Anthony Duane Stewart
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, United States
Andrew G Scheuermann
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, Gainesville, Florida, United States
Andy P Gerger
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, United States
Brent P Gila
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, United States
Cammy R Abernathy
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, United States
Stephen J Pearton
Affiliation:
[email protected], University of Florida, Materials Science & Engineering, United States
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Abstract

Samarium oxide (Sm2O3) and samarium gallium oxide (SmxGa1-x)2O3 have been proposed as candidate dielectric materials for the development of gallium arsenide (GaAs) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. Growth of thin (20nm-50nm) Sm2O3 and (SmxGa1-x)2O3 layers on GaAs substrates via plasma-assisted molecular beam epitaxy (MBE) has been performed using a range of growth temperatures and samarium cell temperatures. X-ray photoelectron spectroscopy (XPS) of the deposited films showed evidence of unbonded Sm metal in the films which decreased with decreasing Sm cell temperature, but was relatively independent of substrate temperature. Stoichiometry of the oxide was found to be independent of substrate temperature, but increased in oxygen to metal ratio as the Sm cell temperature was decreased. Decreasing the Sm cell temperature also suppressed the formation of the monoclinic phase and promoted the growth of the cubic phase. Films grown at higher (500şC) temperature showed the presence of a crystalline interface, but relatively high surface roughness and the presence of multiple crystalline phases. Current-voltage analysis of one hundred micron diameter MOS diodes showed breakdown fields at 1 mA/cm2 of up to 4.35 MV/cm. Breakdown field was found to decrease with increasing Sm unbonded metal content in the films. The effect of stoichiometry and phase distribution on the interface state density (Dit) and capacitance-voltage behavior of MOS diodes was also investigated.

Keywords

dielectricoxidepassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A10-03
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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3. Stewart, A.D., Gerger, A., Gila, B.P., Abernathy, C.R., Pearton, S.J., Applied Physics Lettes 92, 153511 (2008).Google Scholar