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On the Influence of Laser Beam Homogenity on the Regrowth of Ion Implanted Si

Published online by Cambridge University Press:  15 February 2011

M. Wielunski ,
J. Auleytner ,
A. Tjros  and
D. Wielunska
M. Wielunski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Al.Lotnikow 32, Poland lnstitute of Nuclear Research, Swierk, Poland
J. Auleytner
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Al.Lotnikow 32, Poland
A. Tjros
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Al.Lotnikow 32, Poland lnstitute of Nuclear Research, Swierk, Poland
D. Wielunska
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warszawa, Al.Lotnikow 32, Poland lnstitute of Nuclear Research, Swierk, Poland
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Abstract

A simple method of improving laser beam homogenity has been developed. A cylindrical quartz pipe, acting as a lightguide, has been applied for dispersion of the components of the laser beam (microbeams), thus providing more uniform illumination of the sample's surface. The effects of such a homogenizer have been studied by means of X-ray transmission topography [4–5] and 2-MeV 4 He-ion channeling. The samples were ≤111≥ Si wafers implanted with 100 keV As and Bi ions to a dose of 1016 /cm2 . It has been observed that the shallow residual damage layer which exists in the directly irradiated samples is not present in the samples irradiatedthrough the homogenizer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 299
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

* Referee's Addendum: The cylindrical quartz light pipe used in this work was not described by the authors. Design details of a light pipe used in earlier work by Cullis et al. can be found in Cullis, A. G., Webber, H. G. and Bailey, P., J. Phys. E: Sci. Instr. 12, 688 (1979).Google Scholar
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