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Nonuniformity in Selective Anodization of Silicon and its Application to Micro-Tip Fabrication

Published online by Cambridge University Press:  11 February 2011

S. Uehara ,
N. Negishi  and
T. Matsubara
S. Uehara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180–8633, Japan
N. Negishi
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180–8633, Japan
T. Matsubara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Musashino-shi, Tokyo 180–8633, Japan
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Abstract

Characteristics of selective anodization of p+-type Si have been studied. Temporal evolution of the etching front was visualized by periodic porosity modulated anodization. The etching front proceeded inside along the bottom of mask making its angle with the mask bottom face sharper and sharper. It was also found that the etching front proceeds forming a specifically angled facet. Selective anodization was applied to form Si micro-tips. Proper time of anodization for p+-type Si substrate with an n-type circular shape mask left a Si micro-tip formed on the substrate. A high resolution SEM observation revealed that the apex of the tip was composed of {110} facets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J5.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Smith, R.L., Scott, D.C., IEEE Trans. Biomed. Eng., BME–33, 83(1986).Google Scholar
[2] Lammel, G., Schweizer, S. and Renaud, P., Sensors and Actuators A, 49, 2953 (2001).Google Scholar
[3] Lang, W., Steier, P., Schaber, U. and Richter, A., Sensors and Actuators A, 43, 185 (1994).Google Scholar
[4] Higa, K., Nishii, K. and Asano, T., Jpn. J. Appl. Phys., 36, 7741 (1997).Google Scholar
[5] Barillaro, G., Bruschi, P., Diligenti, A. and Navarrini, D., Porous Semiconductor Science and Technology-2002, (Puerto de la Cruz, Spain), 173(2002).Google Scholar
[6] Dolino, G., Bellet, D., “Strain in porous silicon”, Properties of Porous Silicon ed. by Canham, L.,(INSPEC publication, 1997) pp. 118–123.Google Scholar
[7] Young, I.M., Beale, M.I.J. and Benjamin, J.D., Appl. Phys. Lett., 46, 1133 (1985).Google Scholar