Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T14:18:20.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Yi Chen ,
Govindhan Dhanaraj ,
Michael Dudley ,
Hui Zhang ,
Ronghui Ma ,
Yevgeniy Shishkin  and
Stephen E Saddow
Govindhan Dhanaraj
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Hui Zhang
Affiliation:
[email protected], Stony Brook University, Department of Mechanical Engineering, Stony Brook, NY, 11794-2300, United States
Ronghui Ma
Affiliation:
[email protected], University of Maryland at Baltimore County, Department of Mechanical Engineering, Baltimore, MD, 21250, United States
Yevgeniy Shishkin
Affiliation:
[email protected], University of South Florida, Department of Electrical Engineering, Tampa, FL, 33620, United States
Stephen E Saddow
Affiliation:
[email protected], University of South Florida, Department of Electrical Engineering, Tampa, FL, 33620, United States
Get access

Abstract

Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted “conservative climb” model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted “conservative climb”.

Keywords

crystal growthdefectsgrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Koga, K., Fujikawa, Y., Ueda, Y. and Yamaguchi, T., Springer Proc. Phys. 71, 96 (1992)Google Scholar
2 Dudley, M., Huang, X. R., Huang, W., Powell, A., Wang, S., Neudeck, P. and Skowronski, M., Appl. Phys. Lett. 75, 784 (1999)Google Scholar
3 Neudeck, P. G., Huang, W. and Dudley, M., Solid-State Electronics 42, 2157 (1998)Google Scholar
4 Clapper, H., Defects in non-metal crystals, in: Characterization of Crystal Growth Defects by XRay Methods (Plenum, New York, 1980), p. 133 Google Scholar
5 Lendenmann, H., Dahlquist, F., Johansson, N., Soderholm, R., Nilsson, P. A., Bergman, J. P. and Skytt, P., Mater. Sci. Forum 353–356, 727 (2001)Google Scholar
6 Chen, H., Raghothamachar, B., Vetter, W., Dudley, M., Wang, Y. and Skromme, B., Mater. Res. Soc. Symp. Proc. San Francisco, CA, 2006 (Submitted)Google Scholar
7 Dhanaraj, G., Dudley, M., Chen, Y., Raghothamachar, B., Wu, B. and Zhang, H., J. Cryst. Growth 287, 344 (2006)Google Scholar
8 Dhanaraj, G., Chen, Y., Dudley, M. and Zhang, H., Mater. Sci. Forum 2006 (accepted)Google Scholar
9 Chen, Y., Dhanaraj, G., Chen, H., Vetter, W., Dudley, M. and Zhang, H., Mater. Res. Soc. Symp. Proc. Boston, MA, 2005 (accepted)Google Scholar
10 Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., and Saddow, S.E., presented at ICSCRM'05, Pittsburgh, PA, September 2005; to be published in Mater. Sci. Forum 2006Google Scholar
11 Samant, A. V., Zhou, W. L. and Pirouz, P., Mater. Sci. Forum 264–268, 627 (1998)Google Scholar
12 Ha, S., Skowronski, M., Vetter, W.M. and Dudley, M., J. Appl. Phys. 92, 778 (2002)Google Scholar
13 Zhang, M., H. M. Hobgood and Pirouz, P., Mater. Sci. Forum 457–460, 371 (2004)Google Scholar