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MOVPE Growth and Characterization of AlInN FET Structures on Si(111)

Published online by Cambridge University Press:  01 February 2011

Christoph Hums ,
Aniko Gadanecz ,
Armin Dadgar ,
Jürgen Bläsing ,
Hartmut Witte ,
Thomas Hempel ,
Annette Dietz ,
Pierre Lorenz ,
Stefan Krischok  and
Jürgen Alois Schaefer
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Christoph Hums
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany, +493916712471
Aniko Gadanecz
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Armin Dadgar
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Jürgen Bläsing
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Hartmut Witte
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Thomas Hempel
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Annette Dietz
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Pierre Lorenz
Affiliation:
[email protected], Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Stefan Krischok
Affiliation:
[email protected], Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Jürgen Alois Schaefer
Affiliation:
[email protected], Technical University Ilmenau, Institute of Micro- and Nanotechnologies and Institute of Physics, Weimarerstr. 32, Ilmenau, 98684, Germany
Jürgen Christen
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
Alois Krost
Affiliation:
[email protected], Otto-von-Guericke-University Magdeburg, Institute of Experimental Physics, Universitätsplatz 2, Magdeburg, 39106, Germany
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Abstract

In this work metalorganic chemical vapor phase epitaxy (MOVPE) growth and characterization of AlInN in the whole compositional range and the impact on the development of field effects transistors (FET) structures will be presented. Due to the large difference in the lattice parameters of the binaries AlN and InN the growth of AlInN with high indium concentrations is ambitious, and first the growth conditions for the alloy will be discussed. An experimental phase diagram and corresponding theoretical calculations will be displayed. The critical layer thickness of AlInN on GaN has been experimentally determined. Relaxation of the AlInN-layer has a strong influence on the sample morphology. At indium concentration exceeding 30% an polarization induced hole gas is expected at the AlInN/GaN interface from theoretical calculations, but no p-channel conductivity could be confirmed. The absence of the two dimensional hole gas will be discussed.

Keywords

nitridenanostructurealloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C04-03
Copyright
Copyright © Materials Research Society 2008

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References

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