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Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Sang Yeol Lee ,
Yuan Li ,
Jang-Sik Lee ,
J. K. Lee ,
M. Nastasi ,
S.A. Crooker ,
Q.X. Jia ,
Hong-Seong Kang  and
Joeng-Seok Kang
Sang Yeol Lee
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
Yuan Li
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
Jang-Sik Lee
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
J. K. Lee
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
M. Nastasi
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
S.A. Crooker
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
Q.X. Jia
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 Hong-Seong Kang and Jeong-Seok Kang
Hong-Seong Kang
Affiliation:
Department of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea G
Joeng-Seok Kang
Affiliation:
Department of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea G
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Abstract

ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , c7.9
Copyright
Copyright © Materials Research Society 2003

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