Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-24T17:27:15.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and ferroelectric properties of ultrathin PbTiO3 films by MOCVD

Published online by Cambridge University Press:  26 February 2011

Hironori Fujisawa ,
Toru Horii ,
Yoshiyuki Takashima ,
Masaru Shimizu ,
Yasutoshi Kotaka  and
Koichiro Honda
Hironori Fujisawa
Affiliation:
[email protected], University of Hyogo, Dept. of EE & CS, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan, +81-792-67-4883, +81-792-67-4855
Toru Horii
Affiliation:
[email protected], University of Hyogo, Dept. of EE & CS, Japan
Yoshiyuki Takashima
Affiliation:
[email protected], University of Hyogo, Dept. of EE & CS, Japan
Masaru Shimizu
Affiliation:
[email protected], University of Hyogo, Dept. of EE & CS, Japan
Yasutoshi Kotaka
Affiliation:
[email protected], Fujitsu Laboratory Ltd., Japan
Koichiro Honda
Affiliation:
[email protected], Fujitsu Laboratory Ltd., Japan
Get access

Abstract

We report on microstructure and ferroelectric properties of ultrathin PbTiO3 films epitaxially grown on SrTiO3(100), La-doped SrTiO3(100) and SrRuO3/SrTiO3(100) by MOCVD. High angle annular dark field scanning transmission electron microscopy, atomic force microscopy, x-ray diffraction and x-ray reflectivity measurements demonstrated that 1-20 monolayer (ML)-thick epitaxial PbTiO3 films had high-crystallinity, atomically flat surface and sharp interface at an atomic scale. The epitaxial relationship and thickness were also confirmed by these methods. Kelvin force probe microscopy and contact resonance piezoresponse force microscopy revealed that a 7ML (2.7nm)-thick PbTiO3 film grown on SrRuO3/SrTiO3 had the ferroelectric polarization.

Keywords

ferroelectricitychemical vapor deposition (CVD) (deposition)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-31
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Maruyama, T., Saitoh, M., Sakai, I., Hidaka, T., Yano, Y. and Noguchi, T., Appl. Phys. Lett. 73, 3524 (1998).Google Scholar
2 Tybell, T., Ahn, C. H. and Triscone, J. M., Appl. Phys. Lett. 75, 856 (1999).Google Scholar
3 Yanase, N., Abe, K., Fukushima, N. and Kawakubo, T., Jpn. J. Appl. Phys. 38, 5305 (1999).Google Scholar
4 Pertsev, N. A., Contreras, J. R., Kukhar, V. G., Hermanns, B., Kohlstedt, H. and Waser, R., Appl. Phys. Lett. 83, 3356 (2003).Google Scholar
5 Nonomura, H., Fujisawa, H., Shimizu, M. and Niu, H., Jpn. J. Appl. Phys. 41, 6682 (2002).Google Scholar
6 Fujisawa, H., Nonomura, H., Shimizu, M., Niu, H. and Honda, K., Appl. Phys. Lett. 86, 012903 (2005).Google Scholar
7 Fong, D. D., Stephenson, G. B., Streiffer, S. K., Eastman, J. A., Auciello, O., Fuoss, P. H. and Thompson, C., Science 304, 1650 (2004).Google Scholar
8 Kim, Y. S., Kim, D. H., Kim, J. D., Chang, Y. J., Noha, T. W., Kong, J. H., Char, K., Park, Y. D., Bu, S. D., Yoon, J.G. and Chung, J.S., Appl. Phys. Lett. 86, 102907 (2005).Google Scholar
9 Nagarajan, V., Prasertchoung, S., Zhao, T., Zheng, H., Ouyang, J., Ramesh, R., Tian, W., Pan, X. Q., Kim, D. M., Eom, C. B., Kohlstedt, H. and Waser, R., Appl. Phys. Lett. 84, 5225 (2004).Google Scholar
10 Ghosez, P. and Rabe, K. M., Appl. Phys. Lett. 76, 2767 (2000).Google Scholar
11 Meyer, B. and Vanderbit, D., Phys. Rev. B 63, 205426 (2001).Google Scholar
12 Junquera, J. and Ghosez, P., Nature 422, 506 (2003).Google Scholar
13 Waghmare, U. V. and Rabe, K. M., Phys. Rev. B 55, 6161 (1997).Google Scholar
14 Okino, H., Yuzawa, K., Matsushige, K. and Yamamoto, T., Trans. Mater. Res. Soc. Jpn. 27, 239 (2002).Google Scholar
15 Okino, H., Sakamoto, J. and Yamamoto, T., Jpn. J. Appl. Phys. 42, 6209 (2003).Google Scholar
16 Harnagea, C., Alexe, M., Hesse, D. and Pignolet, A., Appl. Phys. Lett. 83, 338 (2003).Google Scholar
17 Koster, G., Kropman, B. L., , G. J. Rijnders, H. M., Blank, D. H. A. and Rogalla, H., Appl. Phys. Lett. 73, 2920 (1998).Google Scholar
18 Fujisawa, H., Nonomura, H., Shimizu, M. and Niu, H., J. Cryst. Growth 237–239, 459 (2002).Google Scholar