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Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems

Published online by Cambridge University Press:  11 February 2011

Aurelien Morel ,
Pierre Lefebvre ,
Thierry Taliercio ,
Bernard Gil ,
Nicolas Grandjean ,
Benjamin Damilano  and
Jean Massies
Aurelien Morel
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, Université Montpellier II, CC 074, 34095 Montpellier Cedex 5, France.
Pierre Lefebvre
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, Université Montpellier II, CC 074, 34095 Montpellier Cedex 5, France.
Thierry Taliercio
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, Université Montpellier II, CC 074, 34095 Montpellier Cedex 5, France.
Bernard Gil
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, Université Montpellier II, CC 074, 34095 Montpellier Cedex 5, France.
Nicolas Grandjean
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France.
Benjamin Damilano
Affiliation:
Groupe d'Etude des Semiconducteurs, CNRS, Université Montpellier II, CC 074, 34095 Montpellier Cedex 5, France.
Jean Massies
Affiliation:
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, rue Bernard Grégory, 06560 Valbonne, France.
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Abstract

Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electric fields and of carrier localization on a nanometer-scale. These two intricate effects imply a separate localization of electrons and holes. Such a microscopic description accounts very well for both the decays shape and the scaling law.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L5.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

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