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Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4
Published online by Cambridge University Press: 10 February 2011
Abstract
The electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.
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- Copyright © Materials Research Society 1997
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