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In Situ Sensors for CIGS Deposition and Manufacture

Published online by Cambridge University Press:  01 February 2011

I.L Repins
Affiliation:
ITN Energy Systems; Littleton, CO 80127
N. Gomez
Affiliation:
ITN Energy Systems; Littleton, CO 80127
L. Simpson
Affiliation:
ITN Energy Systems; Littleton, CO 80127
B. Joshi
Affiliation:
ITN Energy Systems; Littleton, CO 80127
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Abstract

In situ sensors are an important tool for process control, optimization, and documentation, both in the laboratory and industrial environments. Their further application to deposition of CuInxGa1-xSe2 (CIGS) for photovoltaics is particularly important, as record device efficiencies produced in the laboratory have yet to be replicated in manufacturing. This paper provides an overview of the current state of the art of in situ diagnostics for devices based on coevaporated CIGS.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Ramanathan, K Contreras, MA Perkins, CL Asher, S Hasoon, FS Keane, J Young, D Romero, M Metzger, W Noufi, R Ward, J Duda, A. Properties of 19.2% Efficiency CuInGaSe2 Thin-film Solar Cells. Progress in Photovoltaics: Research and Applications 2003; 11: 225230.Google Scholar
2 Gogol, CA Cipro, C. Current Industrial Practices — Technical Note: Composition Control of High Temperature Superconducting Materials. Surface and Coatings Technology 1989; 37: 339348.Google Scholar
3 Gogol, CA Reagan, HS. A performance comparison of vacuum deposition monitors employing atomic absorption (AA) and electron impact emission spectroscopy. Journal of Vacuum Science and Technology 1982; A1(2): 252256.Google Scholar
4 Hanket, GM Paulson, PD Singh, U Junker, ST Birkmire, RW Doyle, FJ Eser, E Shafarman, WN. Fabrication of Graded Cu(InGa)Se2 Films By Inline Evaporation. Twenty-Eighth IEEE Photovoltaic Specialists Conference, 2000; 499504.Google Scholar
5 Stolt, L Hedstrom, J Sigurd, D. Coevaporation with rate control system based on quadrupole mass spectrometer, Journal of Vacuum Science and Technology 1985; 3: 403407.Google Scholar
6 Maissel, L.M., Glang, R., Handbook of Thin Film Technology, McGraw-Hill, New York, 1970, pp. 1103 ff.Google Scholar
7 Neuer, G., Fiessler, L., Groll, M., Schreiber, E., “Critical analysis of the different methods of multiwave length pyrometry,” Temperature, its Measurement and Control in Science and Industry, Vol. 6, Edited by Schooley, J.F., American Institute of Physics, New York, 1992, pp. 787790.Google Scholar
8 Repins, I.L., Fisher, D., Batchelor, W.K., Woods, L., Beck, M.E., “A Non-Contact Low-Cost Sensor for Improved Repeatability in Co-Evaporation of High-Quality CIGS”, Progress in Photovoltaics, in press, 2005.Google Scholar
9 Simpson, L. “Trajectory Oriented and Fault Tolerant Based, Intelligent Process Control for Flexible CIGS PV Module Manufacturing,” Final report for National Renwable Energy Laboratory PVMat contract ZDO-2-30628-07, (2005).Google Scholar
10 Felice, R.A., “The Spectropyrometer — a Practical Multi-Wavelength Pyrometer,” The 8th Symposium on Temperature: Its Measurement and Control in Science and Industry, (2004).Google Scholar
11 Eisgruber, I.L., Joshi, B., Gomez, N., Britt, J., Vincent, T., “In situ X-Ray Fluorescence Used for Real-Time Control of CuInxGa1-xSe2 Thin Film Composition”, Thin Solid Films 408, pp. 6472, 2002.Google Scholar
12 Eisgruber, I.L., Engel, J.R., Treece, R.E., Hollingsworth, R.E., Britt, J., “In situ Measurements of Cu(In,Ga)Se2 Composition by X-Ray Fluorescence”, IEEE Photovoltaics Specialists Conference Record, 28, pp. 505508, 2000.Google Scholar
13 Satoh, TS Hayashi, S Nishiwaki, S Shimkawa, S Hashimoto, Y Negami, T Uenoyama Fabrication, T. of Cu(In,Ga)Se2 by In-Line Evaporation (Composition Monitoring Method Using Heat Radiation). Solar Energy Materials and Solar Cells 2001; 67: 203207.Google Scholar
14 Nishitani, M Negami, T Wada Composition, T. Monitoring Method in CuInSe2 Thin Film Preparation. Thin Solid Films 1995; 258: 313316.Google Scholar
15 Negami, T Nishitani, M Kohara, N Hashimoto, Y Wada, T. Real-Time Composition Monitoring Methods In Physical Vapor Deposition of Cu(In,Ga)Se2 Thin Films. Materials Research Society Symposium Proceedings 1996; 67: 267278.Google Scholar
16 Gabor, AM Tuttle, JR Albin, DS Contreras, MA Noufi, R Herman AM. High-efficiency CuInxGa1-xSe2 solar cells made from (Inx,Ga1-x)2Se3 precursor films. Applied Physics Letters 1994; 65(2): 198200.Google Scholar
17 Kessler, J Scholdstrom, J Stolt Rapid, L. Cu(In,Ga)Se2 Growth Using “End Point Detection. Proceedings of the 28th IEEE Photovoltaics Specialists Conference, 2000; 509512.Google Scholar
18 Sakurai, K., Hunger, R., Scheer, R., Kaufmann, C.A., Yamada, A., Baba, T., Kimura, Y., Matsubara, K., Fons, P., Nakanishi, H., Niki, S., “In situ Diagnostic Methods for Thin-Film Fabrication: Utilization of Heat Radiation and Light Scattering,” Progress in Photovoltaics, 12, 2004, 219234.Google Scholar
19 Scheer, R., CPietzker, h., Braunig, D., “Laser Light Scattering in situ Studies on the Growth of Chalcopyrite Thin Films,” Materials Research Society Proceedings, 668, (2001), pp.H7.3–H7.3.5.Google Scholar
20 Simpson, L. J. et al. , Mat. Res. Soc. Symp. Vol 616, 9 (2000). “A Parallel Detecting Spectroscopic Ellipsometer for Intelligent Process Control of Continuously Deposited CIGS Films”Google Scholar
21US patent 6,384,916 B1, Parallel Detecting, Spectroscopic Ellipsometer/polarimeter (2002).Google Scholar
22 Repins, I.L., Stanbery, B.J., Young, D. L., Li, S.S., Metzger, W. K., Perkins, C.L., Shafarman, W.N., Beck, M. E., Chen, L., Kapur, V. K., Tarrant, D., Gonzalez, M.D., Jensen, D.G., Anderson, T.J., Wang, X., Kerr, L.L., Keyes, B., Asher, S., Delahoy, A., Roedern, B. Von, “Comparison of Device Performance and Measured Transport Parameters in Widely-Varying Cu(In,Ga)(Se,S) Solar Cells,” Progress in Photovoltaics, (2005), publication pending.Google Scholar
23 Jensen, D.G., “Correlation Between Modeled and Experimental Device Performance Results for CIGS Solar Cells,” IEEE Photovoltaics Specialists Conference Record, 31, 2005.Google Scholar
24 Keyes, BM Dippo, P Metzger, W AbuShama, J Cu, Noufi R. (In,Ga)Se2 Thin Film Evolution During Growth — A Photoluminescence Study. Conference Record of the IEEE Photovoltaic Specialists Conference 2002: 29: 511514.Google Scholar
25 Ohnesorge, B Weigand, R Bacher, G Forchel, A Riedl, W Karg, FH. Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells. Applied Physics Letters 1998; 73(9): 12241226.Google Scholar
26 Jasenek, A Rau, U Nadenau, V Schock, HW Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect Spectroscopy. Journal of Applied Physics 2000:87(1): 594602.Google Scholar
27 Scofield, J. H., Asher, S., Albin, D., Tuttle, J., Contreras, M., Niles, D., Reedy, R. Tennant, A., Noufi, R., “Sodium Diffusion, Selenization, and Microstructure Effects Associated with Various Molybdenum Back Contact Layers for CIS Based Solar Cells,” Conference Record of the IEEE Photovoltaic Specialists Conference 1994: 24: 167174.Google Scholar
28 Alleman, J. L., Al-Thani, H., Noufi, R., Moutinho, H., Al-Jassim, M. M., Hasoon, F., “Dependence of the Characteristics of Mo Films on Sputter Conditions”, NCPV Program Review Meeting, 2000, pp. 239240.Google Scholar
29 Hartman, M., Schmidt, M., Jasenek, A., Schock, H.W., Kessler, F., Herz, K., Powalla, M., “Flexible and Light Weight Substrates for Cu(In,Ga)Se2 Solar Cells and Modules”, Proceedings of the 28th IEEE Photovoltaics Specialists Conference, 2000, pp. 638642.Google Scholar
30 Fisher, D.C., Repins, I.L., Schaefer, J., Beck, M.E., Batchelor, W. K., Young, M., Asher, S., “The Effect of Mo Morphology on the Performance of Cu(In,Ga)Se2 Thin Films,” IEEE Photovoltaics Specialists Conference Record, 31, 2005.Google Scholar
31 Contreras, M.A., Tuttle, J., Gabor, A., Tennant, A., Ramanathan, K., Asher, S., Franz, A., Keane, J., Wang, L., Scofield, J., Noufi, R., “High Efficiency Cu(In,Ga)Se2-Based Solar Cells: Processing of Novel Absorber Structures”, IEEE Photovoltaic Specialists Conference Record, 24, 1994, pp.6875.Google Scholar
32 Ramanathan, K., Keane, J., Noufi, R., “Properties of High-Efficiency CIGS Thin-Film Solar Cells,” IEEE Photovoltaics Specialists Conference Record, 31, 2005.Google Scholar
33 Eisgruber, I.L., Engel, J.R., Hollingsworth, R.E., Bhat, P.K., Wendt, R., “Intelligent Process Control of Indium Tin Oxide Sputter Deposition Using Optical Emission Spectroscopy”, Journal of Vacuum Science and Technology A, 17(1), pp. 190197, 1999.Google Scholar
34 Ruckh, M., Hariskos, D., Ruhle, U., Schock, H.W., “Applications of ZnO in Cu(In,Ga)Se2 Solar Cells,” IEEE Photovoltaic Specialists Conference Record, 25, 1996.Google Scholar