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Improvement of the Luminescing Behaviour of Simmplanted SiO2 Films

Published online by Cambridge University Press:  15 February 2011

T. Schuster ,
T. Dittrich ,
H. E. Porteanu ,
T. Fischer ,
E. Hechtl ,
V. Petrova-Koch  and
F. Koch
T. Schuster
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
T. Dittrich
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
H. E. Porteanu
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
T. Fischer
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
E. Hechtl
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
V. Petrova-Koch
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
F. Koch
Affiliation:
Physik-Department E 16, Technische Universität München, D-85747 Garching, Germany
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Abstract

In previous work we reported on the observation of continuously tunable photoluminescence in Si+-implanted SiO2-films with moderate intensities. In this paper we demonstrate improved performance of such samples. The photoluminescence intensity increases abruptly up to two orders of magnitude when the anneal temperature is elevated to values higher than 1000…1100°C. This strong photoluminescence degrades less than that of porous silicon. Very fine tunability in the spectral range from 2.1 eV to 1.3 eV is achieved in samples implanted with a graded dose. In the analysis of the results we try to distinguish between the contributions of the Si-nanocrystals and of the oxide related defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 111
Copyright
Copyright © Materials Research Society 1997

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References

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