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Hydrostatic and Biaxial Strain in BaxSr1-xTiO3 Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

C. M. Carlson ,
P. A. Parilla ,
T. V. Rivkin ,
J. D. Perkins  and
D. S. Ginley
C. M. Carlson
Affiliation:
Departmenit of Physics, University of Colorado, Boulder, CO 80309-0390
P. A. Parilla
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
T. V. Rivkin
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
J. D. Perkins
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
D. S. Ginley
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

We grew BaxSr1−xTiO3 (BST) films on MgO single crystal substrates by pulsed laser deposition (PLD). We report the in-plane (a) and out-of-plane (c) lattice parameters of BST films deposited in a range of O2 deposition pressures [P(02)], as measured by asymmetric rocking curve diffraction. As P(O2) increases, the films' biaxial strain changes from compression (a < c), to cubic (a = c), and then to tension (a > c). Furthermore, both a and c are larger than the lattice constant for bulk BST of the same composition. This indicates the presence of a hydrostatic strain component in addition to the biaxial component. From the measured lattice parameters, we calculate the total residual strain in terms of biaxial and hydrostatic components. We also examine the effects of a post-deposition anneal. Characterizing residual strain and understanding its origin(s) are important since strain affects the dielectric properties of BST films and thereby the properties of devices which incorporate them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 161
Copyright
Copyright © Materials Research Society 2000

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References

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