Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T15:23:31.639Z Has data issue: false hasContentIssue false
  • English
  • Français

Humidity Sensing Property of Zinc Oxide Film Deposited by PLD

Published online by Cambridge University Press:  01 February 2011

Shobhna Dixit ,
K. C. Dubey ,
K. P. Mishra ,
Atul Srivastava ,
R. K. Shukla  and
Anchal Srivastava
Shobhna Dixit
Affiliation:
[email protected], University of Lucknow, Department of Physics, Department of Physics,, University of Lucknow,, University Road, LUCKNOW, 226007, India, 091-522-2268186
K. C. Dubey
Affiliation:
[email protected], University of Lucknow, Department of Physics, University Road, Lucknow, 226007, India
K. P. Mishra
Affiliation:
[email protected], University of Lucknow, Department of Physics, University Road, Lucknow, 226007, India
Atul Srivastava
Affiliation:
[email protected], University of Lucknow, Department of Physics, University Road, Lucknow, 226007, India
R. K. Shukla
Affiliation:
[email protected], University of Lucknow, Department of Physics, University Road, Lucknow, 226007, India
Anchal Srivastava
Affiliation:
[email protected], University of Lucknow, Department of Physics, University Road, Lucknow, 226007, India
Get access

Abstract

This paper reports structural, morphological, optical and humidity sensing characteristics of pulsed laser deposited ZnO film. The XRD pattern reveals amorphous structure of the film. Scanning electron micrograph indicates formation of ZnO rods in micron size. Transmission increases gradually in the UV-VIS region. For studying the humidity sensing characteristics of the film, base of a right angled isosceles glass prism has been coated. Chopped light from a polarized He-Ne laser incident on the entry face of the prism gets reflected from the base – film – humid air interfaces and then emergent light is collected by the detector placed in front of the exit face of the prism. The least change in relative humidity which could be measured using the present configuration is 1.06RH%. Further the film is annealed at 400°C for four hours and its humidity sensing behavior is investigated in the similar manner which now shows a reversed trend. The sensitivity to humidity has decreased and the least change which could be detected now is 1.16RH%.

Keywords

sensorx-ray diffraction (XRD)scanning electron microscopy (SEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I05-27
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bagnall, D. M. Chen, Y. F. Zhu, Z. Yao, T. Koyama, S. Shen, M. Y. and Goto, T. Appl. Phys. Lett. 70, 2230 (1997).Google Scholar
2. Kim, H. Pique, A. Horwitz, J. S. Murata, H. Kafafi, Z. H. Gilmore, C. M. and Chirsey, D. B. Thin Solid Films 377-78, 798 (2000)Google Scholar
3. Shukla, R. K. Srivastava, A. Srivastava, A. and Dubey, K. C. J. Cryst. Growth 294, 427 (2006).Google Scholar
4. Das, R. and Ray, S. Indian J. Phys. 78 (9), 901 (2004).Google Scholar
5. He, Y. and Kanicki, J. Appl. Phys. Lett. 76, 661 (2000).Google Scholar
6. Kim, H. Gilmore, C. M. Pique, A. Horwitz, J. S. Murata, H. Kafafi, Z. H. and Chirsey, D. B. J. Appl. Phys. 11, 86 (1999).Google Scholar
7. Pol, F. C. M. Van De, Am. Ceram. Soc. Bull. 69, 1959 (1990).Google Scholar
8. Zhao, J. L. Li, X. M. Bian, J. M. Yu, W. D. and Gao, X. D. J. Cryst. Growth 276, 507 (2005).Google Scholar
9. Kim, H. and Gilmore, C. M. Appl. Phys. Lett. 76, 259 (2000).Google Scholar
10. Look, D. C. Renolds, D. C. Sizelove, J. R. Jones, R. L. Litton, C. W. Cantwell, G. and Harsch, W. C. Solid State Commun. 105, 399 (1998).Google Scholar
11. Baruwati, B. Kishore Kumar, D. and Manorama, S. V. Sens. Act. B 119, 676 (2006).Google Scholar
12. Jiaquing, X. Yuping, C. Yadong, Li and Jianiah, Shen, J. Mater. Sci 40, 2919 (2005).Google Scholar
13. Pitcher, S. Pheile, J. A. Ren, H. and Vetelino, J. F. Sens. Act. B 93, 454 (2003).Google Scholar
14. Ying, J. Wan, C. and He, P. Sens. Act. B 62 (3), 165 (2000).Google Scholar
15. SureshRaj, A. M. E. Magadalane, C. M. and Nagaraja, K. S. Phys. Status Solidi A 191, 230 (2002).Google Scholar
16. Pokhral, S. and Nagaraja, K. S. Sens. Act. B 92, 144 (2003).Google Scholar
17. Faia, P. M. Furtado, C. S. and Ferreira, A. J. Sens. Act. B 101, 183 (2004).Google Scholar
18. Dixit, S. Srivastava, A. Shukla, R. K. and Srivastava, A. Opt. Rev. 14 (4), 186 (2007).Google Scholar
19. Yadav, B. C. Srivastava, A. Shukla, R. K. and Dubey, G. C. Indian J. Pure. Appl. Phys. 44, 694 (2006).Google Scholar