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Hot Carrier Effects in Self-aligned and Offset-Gated Polysilicon Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

N. Arpatzanis ,
A. T. Hatzopoulos ,
D. H. Tassis ,
Charalambos Dimitriadis  and
G. Kamarinos
N. Arpatzanis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
A. T. Hatzopoulos
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
D. H. Tassis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
Charalambos Dimitriadis
Affiliation:
[email protected], Aristotle University of Thessaloniki, Department of Physics, Thessaloniki, Thessaloniki, 54124, Greece
G. Kamarinos
Affiliation:
IMEP ENSERG, 23 rue des Martyrs, BP 257, 38016 Grenoble Cedex 1, France
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Abstract

The effects of hot carriers on the transfer characteristics of self-aligned and offset-gated polysilicon thin-film transistors (TFTs), with channel length L = 10 μm and offset length ΔL = 2 μm, are investigated. In the self-aligned device, the on-state current is substantially reduced, whereas the subthreshold slope remains almost unaffected. In the offset gated device, the transfer characteristic is shifted first positively and then negatively, the on-state current is still substantially reduced and well-defined kinks are formed in the subthreshold region. The device degradation is found to become more pronounced in the offset gated device. A model explaining the post-stress performance of the offset-gated device is presented.

Keywords

polycrystalSielectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005 , 0888-V06-17
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Zhang, S., Zhu, C., Sin, J. K. O., Li, J. N. and Mok, P.K.T., IEEE Trans. Electron Devices 47, 569–575, 2000.Google Scholar
2. Hastas, N. A., Dimitriadis, C. A. and Kamarinos, G., J. Appl. Phys. 92, 4741–4745, 2002.Google Scholar
3. Valletta, A., Mariucci, L., Pecora, A., Fortunato, G., Ayres, J. R. and Brotherton, S. D., Thin Solid Films 427, 117–122, 2003.Google Scholar
4. Dimitriadis, C. A. and Miyasaka, M., IEEE Electron Device Lett 21, 584–586, 2000.Google Scholar
5. Miyasaka, M. and Stoemenos, J., J. Appl. Phys. 86, 5556–5565, 1999.Google Scholar
6. Angelis, C. T., Dimitriadis, C. A., Miyasaka, M., Farmakis, F. V., Kamarinos, G., Brini, J. and Stoemenos, j., J. Appl. Phys. 86, 4600–4606, 1999.Google Scholar
7. Hastas, N. A., Archontas, N., Dimitriadis, C. A., Kamarinos, G., Nikolaidis, T., Georgoulas, N. and Thanailakis, A., Microelectronics Reliability 45, 341–348, 2005.Google Scholar
8. Heremans, P., Bellens, R., Groeseneken, G., Maes, H. E., IEEE Trans. Electron Devices 35, 2194–2209, 1988.Google Scholar
9. Makino, T., Nakamura, H., and Nakashita, T., J. Appl. Phys. 51, 5868–5871, 1980.Google Scholar
10. Hasegawa, S., Takenaka, S. and Kurata, Y., J. Appl. Phys. 53, 5022–5027, 1982.Google Scholar
11. Grove, A. S., Physics and Technology of Semiconductor Devices, Wiley, New York, 1967.Google Scholar