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High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

Published online by Cambridge University Press:  03 September 2012

M. Iwaya ,
S. Terao ,
N. Hayashi ,
T. Kashima ,
T. Detchprohm ,
H. Amano ,
I. Akasaki ,
A. Hirano  and
C. Pernot
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Terao
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
N. Hayashi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Kashima
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Detchprohm
Affiliation:
High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
A. Hirano
Affiliation:
Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji-Awata-machi, Shimogyo-ku, Kyoto 600-8815, Japan
C. Pernot
Affiliation:
Research and Development Department, Osaka Gas Co. Ltd., 17 Chudoji-Awata-machi, Shimogyo-ku, Kyoto 600-8815, Japan Invited researcher from Groupe d'Etude des Semiconducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 05, France
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Abstract

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of AlxGa1−xN, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger's vector contains [0001] components. UV photodetectors using thus-grown high quality AlxGa1−xN layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 [.mu]m strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm2 have been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W1.10
Copyright
Copyright © Materials Research Society 1999

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References

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett., 48, 353 (1986)Google Scholar
2. Amano, H. and Akasaki, I.: Mat. Res. Soc. Ext Abst., EA- 21, 165 (1991)Google Scholar
3. Amano, H., Kitoh, M., Hiramatsu, K. and Akasaki, I.: J. Electrochem. Soc., 137, 1639 (1990)Google Scholar
4. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I.: Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
5. Han, J., Crawf, M.H., Shul, R.J., Hearne, S.J., Chason, E., J.J Figiel and Banas, M.: MRS Internet J. Nitride Semicond. Res. 4S1, G7.7 (1999).Google Scholar
6. Pernot, C., Hirano, A., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 37, L1202 (1998).Google Scholar
7. Pernot, C., Hirano, A., Iwaya, M., Detchprohm, T., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 38, L487 (1999).Google Scholar
8. Koide, Y., Itoh, N., Itoh, K., Sawaki, N. and Akasaki, I., Jpn. J. Appl. Phys. 27, 1156 (1988)Google Scholar
9. Itoh, K., Doctor Thesis, School of Eng., Nagoya University, Nagoya, 1991.Google Scholar
10. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I.: Jpn. J. Appl. Phys. 37, L316 (1998).Google Scholar
11. Amano, H., Iwaya, M., Kashima, T., Katsuragawa, M., Akasaki, I., Han, J., Hearne, S., Floro, J. A., Chason, E. and Figiel, J., Jpn. J. Appl. Phys. 37, L1540 (1998).Google Scholar
12. Amano, H., Iwaya, M., Hayashi, N., Kashima, T., Katsuragawa, M., Takeuchi, T., Wetzel, C., Akasaki, I.: MRS Internet J. Nitride Semicond. Res. 4S1, G10.1 (1999).Google Scholar
13. Iwaya, M., Terao, S., Hayashi, N., Kashima, T., Amano, H. and Akasaki, I.: submitted to Appl. Surf. Sci.Google Scholar
14. Kashima, T., Nakamura, R., Iwaya, M., Kato, H., Yamaguchi, S., Amano, H. and Akasaki, I.: to be publised Jpn. J. Appl. Phys.Google Scholar
15. Muñoz, E., Garrido, J. A., Izpura, I., Sánchez, F. J., Sánchez-Garcia, M. A., Calleja, E., Beaumont, B. and Gibart, P.: Appl. Phys. Lett. 71, 870 (1997)Google Scholar
16. Binet, F., Duboz, J. Y., Rosencher, E., Scholtz, F. and Härlle, V.: Appl. Phys. Lett. 71, 1202 (1996)Google Scholar
17. Amano, H., Sota, S., Takeuchi, T., Kobayashi, M., Akasaki, I., Burm, J., Schaff, W. J. and Eastman, L. F.: Technical Report of IEICE, ED97-123, CPM97-110, 31 (1997-10).Google Scholar
18. Floro, J., Chason, E., Lee, S., Twesten, R., Hwang, R. and Freund, L.: J. Elec. Mat. 26, 969 (1997)Google Scholar