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A High Resolution TEM Study of In-Situ Surface Oxidation of Indium III–V Semiconductors

Published online by Cambridge University Press:  28 February 2011

David J. Smith  and
Amanda K. Petford-Long
David J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
Amanda K. Petford-Long
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
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Abstract

Electron irradiation of InP, InAs and InSb crystals within the electron microscope causes the crystallization of nearsurface amorphous material and the oxidation of bulk crystalline material. The material most commonly found in both regions is cubic In2O3, although small regions (< 5 nm) of the corresponding In-c 6mpound semiconductors are sometimes recrystallized. The observations are consistent with desorption of the anion species due to electron-beam-stimulated processes, with subsequent oxidation of residual In metal.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 725
Copyright
Copyright © Materials Research Society 1987

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