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Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD

Published online by Cambridge University Press:  28 February 2011

F.H. Ruddell ,
B.M. Armstrong  and
H.S. Gamble
F.H. Ruddell
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
B.M. Armstrong
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
H.S. Gamble
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
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Abstract

This paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 241
Copyright
Copyright © Materials Research Society 1991

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References

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