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Growth of Epitaxial Layers of GexSi1−x BY UHV/CVD
Published online by Cambridge University Press: 28 February 2011
Abstract
Undoped epitaxial layers of GexSi1−x have been grown on (100) silicon substrates using the UHV/CVD technique. Epitaxial films were obtained at growth temperatures between 577 and 665 C. The growth rate and germanium content of the layers has been determined as a function of the germane flow and the deposition temperature. A bake at 800 C was found to be highly beneficial in reducing the defect density and improving the film roughness.
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- Copyright © Materials Research Society 1990