Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-28T19:26:52.436Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of c-GaN Films on the Nitridated β-Ga2O3 Substrates Using RF-MBE

Published online by Cambridge University Press:  01 February 2011

Tsutomu Araki ,
Chiharu Morioka ,
Junichi Wada ,
Keisuke Fujiwara ,
Hiroshi Minami ,
Yasushi Nanishi ,
Shigeo Ohira ,
Norihito Suzuki  and
Toetsu Shishido
Tsutomu Araki
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, 1-1-1 Noji-higashi, Kusatsu, Shiga, 5258577, Japan, +81-77-561-5030, +81-77-561-3994
Chiharu Morioka
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, Japan
Junichi Wada
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, Japan
Keisuke Fujiwara
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, Japan
Hiroshi Minami
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, Japan
Yasushi Nanishi
Affiliation:
[email protected], Ritsumeikan Univ., Dept. of Photonics, Japan
Shigeo Ohira
Affiliation:
[email protected], Nippon Light Metal Co. Ltd., Japan
Norihito Suzuki
Affiliation:
[email protected], Nippon Light Metal Co. Ltd., Japan
Toetsu Shishido
Affiliation:
[email protected], Tohoku University, Institute for Materials Research, Japan
Get access

Abstract

Cubic GaN is successfully grown on β-Ga2O3 by molecular beam epitaxy for the first time. Prior nitridation of the (100) β-Ga2O3 single-crystal substrate by exposure to electron cyclotron resonance nitrogen plasma causes the formation of a surficial (001) c-GaN layer, upon which homo-epitaxial growth of c-GaN can be achieved by radio-frequency molecular beam epitaxy. The epitaxial relationship is confirmed by electron microscopy to be (001) c-GaN // (100) β-Ga2O3, [110] c-GaN // [010] β-Ga2O3, and [1-10] c-GaN // [001] β-Ga2O3.

Keywords

nitrideepitaxymicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF28-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tippins, H. H., Phys. Rev. 140, A316 (1965).CrossRefGoogle Scholar
2. Geller, S., J. Chem. Phys. 33, 676 (1960).CrossRefGoogle Scholar
3. Shimamura, K., Villora, E. G., Domen, K., Yui, K., Aoki, K. and Ichinose, N., Jpn. J. Appl. Phys. 44, L7 (2005).Google Scholar
4. Ohira, S., Wada, J., Morioka, C., Fujiwara, K., Yamaguchi, T., Araki, T., Nanishi, Y. and Shishido, T., The 6th International Conference on Nitride Semiconductors (ICNS-6), Mo-P-032 (2005).Google Scholar