Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-24T17:46:11.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Grazing Incidence Small Angle X-Ray Scattering Study on Low Dielectric Thin Films

Published online by Cambridge University Press:  17 March 2011

C.-H. Hsu ,
Hsin-Yi Lee ,
K.S. Liang ,
U-Ser Jeng ,
D. Windover ,
T.-M. Lu  and
C. Jin
C.-H. Hsu
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
Hsin-Yi Lee
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
K.S. Liang
Affiliation:
Synchrotron Radiation Research Center, Hsinchu, Taiwan
U-Ser Jeng
Affiliation:
Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan
D. Windover
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY, U.S.A
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY, U.S.A
C. Jin
Affiliation:
Texas Instruments, Dallas, TX, U.S.A
Get access

Abstract

Highly porous silica films with pore size in the nanometer scale are being extensively studied as potential candidates for interlevel dielectrics. Because these dielectric materials appear in the form of thin films with a thickness of only several thousand Angstroms, conventional techniques are difficult to be readily applied to study their structure and porosity. We employed small angle scattering in the grazing incidence geometry in this study. Using high resolution xray beamline with synchrotron radiation source, we demonstrate that the small angle x-ray scatteirng (SAXS) data of the porous films can be obtained. The structure of sol-gel derived silica - xerogel films on silicon substrate studied by specular reflectivity and grazing incidence small angle x-ray scattering (GISAXS) will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.23.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jin, Changming, List, Scott, and Zielinski, Eden, Mat. Res. Soc. Proc. 511, 213, (1998).10.1557/PROC-511-213Google Scholar
2. Windover, D., Lu, T.-M., Lee, S.L., Kumar, A., Bakhru, H., Jin, C., Lee, W., Appl. Phys. Lett. 76, 158 (2000).10.1063/1.125688Google Scholar
3. Kowowsky, S.D., Hsu, C.-H., Pershan, P.S., Bevk, J., and Freer, B.S., Appl. Surf. Sci. 84, 179 (1995).10.1016/0169-4332(94)00475-7Google Scholar
4. Parratt, L.G., Phys. Rev. 95, 359 (1954).10.1103/PhysRev.95.359Google Scholar
5. Freltoft, T., Kjems, J.K., and Sinha, S.K., Phys. Rev. B. 33, 269 (1986).10.1103/PhysRevB.33.269Google Scholar
6. Debye, P., Anderson, H.R. Jr., and Brumberger, H., J. Appl. Phys. 28, 679 (1957).10.1063/1.1722830Google Scholar
7. Valiev, E.Z., Bogdanov, S.G., Pirogov, A.N., Sharygin, L.M., and Barybin, V.I., JETP 76, 111 (1993).Google Scholar