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Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)
Published online by Cambridge University Press: 25 February 2011
Abstract
A buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature of the post implantation annealing is lower than 850°C. The depth distribution of Fe and Co, the phase composition as well as the microstructure of the layer system was investigated.
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- Copyright © Materials Research Society 1993
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