Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T18:20:33.079Z Has data issue: false hasContentIssue false
  • English
  • Français

Flexible Pentacene/PMMA Thin-Film Transistors Fabricated on Aluminium Foil Substrates

Published online by Cambridge University Press:  01 February 2011

J. Puigdollers ,
C. Voz ,
M. Fonrodona ,
I. Martín ,
A. Orpella ,
M. Vetter  and
R. Alcubilla
J. Puigdollers
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
C. Voz
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
M. Fonrodona
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
I. Martín
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
A. Orpella
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
M. Vetter
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
R. Alcubilla
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
Get access

Abstract

Pentacene thin-film transistors (TFT) were fabricated on aluminum foils using polymethyl methacrylate (PMMA) as gate dielectric. In such structure, the aluminum substrate acts as the gate electrode itself. A bottom gate inverted structure was used to study the influence of the dielectric and the aluminum substrate on the device performance.

Pentacene thin-films were deposited by thermal evaporation in high-vacuum at deposition rates around 3 Ås-1 and three different substrate temperatures (30, 60 and 90°C). The maximum process temperature achieved was 170°C, corresponding to the baking of polymethyl methacrylate. The TFTs exhibit field-effect mobility values of ∼ 10-3 cm2V-1s-1 and threshold voltage values around –15 V. The influence of the dielectric and the substrate temperature on the pentacene structure and device field-effect mobility is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I9.9
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Dimitrakopoulos, C.D., Malenfant, P.R.L., Adv. Mater., 14, 99 (2002).Google Scholar
2 Gelink, G.H., Edzer, H., Huitema, A., Veenendaal, E.V., Cantatore, E., Schrijnemakers, L., Putten, Jan B.P.H. Van Der, Geuns, Tom C.T., Beehahers, M., Giesbers, J.B., Huisman, B.H., Meijer, E.J., Benito, E.M., Touwslager, F.J., Marsman, A.W., Rens, Bas J.E. Van, Leeuw, D.M. De, Nat. Mater. 3, 106 (2004).Google Scholar
3 Klauk, H., Gundlach, D.J., Nichols, J.A., Jackson, T.N., IEEE Trans. On Electron Dev. 46, 1258 (1999).Google Scholar
4 Gelinck, G.H., Geuns, T.C.T., Leeuw, D.M., Appl. Phys. Lett. 77, 1487 (2000).Google Scholar
5 Kane, M.G., Campi, J., Hammond, M.S., Cuomo, F.P., Greening, B., Sheraw, C.D., Nichols, J.A., Gundlach, D.J., Huang, J.R., Kuo, C.C., Jia, L., Klauk, H., Jackson, T.N., IEEE Electron Device Lett. 21, 534 (2000).Google Scholar
6 Lee, J.H., Kim, S.H., Kim, G.H., Lim, S.C., Lee, H., Jang, J., Zyung, T., Synthetic Metals, 139 (2) 445 (2003).Google Scholar
7 Gundlach, D.J., Klauk, H., Sheraw, C.D., Kuo, C.C., Huang, J.R., Jackson, T.N., IEDM Tech. Dig. 111 (1999).Google Scholar
8 Eder, F., Klauk, H., Halik, M., Zschieschang, U., Schmid, G., Dehm, C., Appl. Phys. Lett. 85, 2673 (2004).Google Scholar
9 Lee, J.B., Subramanian, V., IEEE Trans. On Electron Dev., 52(2), 269 (2005)Google Scholar
10 Knipp, D., Street, R.A., Krusor, B., Apte, R., Ho, J., J. of Non Cryst. Sol. 299-302, 1042 (2002).Google Scholar
11 Knipp, D., Street, R.A., J. of Non Cryst. Sol. 338-340, 595 (2004).Google Scholar
12 Kato, Y., Iba, S., Teramoto, R., Sekitani, T., Someya, T., Kawaguchi, H., Sakurai, T., Appl. Phys. Lett. 84, 3789 (2004).Google Scholar
13 Jin, Y., Rang, Z., Nathan, M.I., Ruden, P.P, Newman, C.R., Frisbie, C.D., Appl. Phys. Lett. 85, 4406 (2004).Google Scholar
14 Dimitrakopoulos, C.D., Brown, A.R., Pomp, A., J. Appl. Phys. 80, 2501 (1996).Google Scholar
15 Gundlach, D.J., Lin, Y.Y.. Jackson, T.N., IEEE Electron Dev. Lett. 18, 87 (1997).Google Scholar
16 Jin, S.H., Yu, J.S., Kim, J.W., Lee, C.A., Park, B.G., Lee, J.D., Lee, J.H., Society for Information Display International Symposium (SID 2003), Baltimore, Maryland (USA).Google Scholar
17 Puigdollers, J., Voz, C., Orpella, A., Quidant, R., Martin, I., Vetter, M., Alcubilla, R., Organic Electronics 5, 67 (2004).Google Scholar