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Ferroelectric Thin Films Grown on Base-Metal Foils for Embedded Passives

Published online by Cambridge University Press:  01 February 2011

Beihai Ma ,
Do-Kyun Kwon ,
Manoj Narayanan  and
U. Balachandran
Beihai Ma
Affiliation:
[email protected], Argonne National Laboratory, Energy Systems Division, 9700 S Cass Ave, Argonne, IL, 60439, United States, 630-252-9961, 630-252-3604
Do-Kyun Kwon
Affiliation:
[email protected], Argonne National Laboratory, Argonne, IL, 60439, United States
Manoj Narayanan
Affiliation:
[email protected], Argonne National Laboratory, Argonne, IL, 60439, United States
U. Balachandran
Affiliation:
[email protected], Argonne National Laboratory, Argonne, IL, 60439, United States
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Abstract

Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The “film-on-foil” approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25°C) and 1800 (at 150°C), leakage current density of 6.6 × 10−9 A/cm2 (at 25°C) and 1.4 × 10−8 A/cm2 (at 150°C), and breakdown field strength >1.2 MV/cm. With samples of PLZT on Cu, we obtained encouraging initial results of dielectric constant >450 and dielectric loss tan(δ) ≈0.04.

Keywords

dielectric propertiesferroelectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-42
Copyright
Copyright © Materials Research Society 2008

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