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Ferroelectric (Pb,La)TiO3 Thin Films Prepared by Metalorganic Chemical Deposition

Published online by Cambridge University Press:  15 February 2011

Z. C. ,
B.S. Kwak  and
A. Erbil
Z. C.
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332; and Department of Physics, Emory University, Atlanta, GA 30322 Department of Physics, National University of Singapore, S0511, Singapore
B.S. Kwak
Affiliation:
Department of Physics, National University of Singapore, S0511, Singapore Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
A. Erbil
Affiliation:
School of Physics, Georgia Institute of Technology, Atlanta, GA 30332
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Abstract

Recently, we reported results of an investigation of the preparation of highly textured (Pb1−xLax)TiO3 (PLT) thin films grown on Si(100) by metalorganic chemical deposition (MOCVD) [1]. In this paper, we discuss an extension of this work to the growth of PLT thin films on fused quartz substrates by the MOCVD technique. A series of PLT films with x between 0 and 0.32 were prepared. Characterization by x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and Raman scattering has been performed on these ferroelectric thin films. XRD indicated the polycrystalline nature of the PLT films and the variation of their tetragonality. The film thickness and La composition were determined by RBS. Raman spectra, measured at 300 and 80 K, showed features of the PLT film and quartz substrate. By using a “difference Raman” technique, more PLT modes were shown. The variations of the PLT Raman modes with the La composition and the measurement temperature were studied. Related physical phenomena and problems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 331
Copyright
Copyright © Materials Research Society 1995

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References

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