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A Facile Method for Patterning Substrates with Zinc Oxide Nanowires

Published online by Cambridge University Press:  31 January 2011

Jeong-Hyun Cho
Affiliation:
[email protected], Johns Hopkins University, Departments of Chemical and Biomolecular Engineering, Baltimore, United States
Elizabeth W Cha
Affiliation:
[email protected], Johns Hopkins University, Department of Biomedical Engineering, Baltimore, Maryland, United States
David Gracias
Affiliation:
[email protected], Johns Hopkins University, Departments of Chemical and Biomolecular Engineering, Chemistry, Baltimore, United States
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Abstract

Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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