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Fabrication of Ga-templates Using a Focused Ion Beam

Published online by Cambridge University Press:  31 January 2011

Hao Wang ,
Greg C. Hartman ,
Joshua Williams  and
Jennifer L. Gray
Hao Wang
Affiliation:
[email protected], University of Pittsburgh, Mechanical Engineering and Materials Science, Pittsburgh, Pennsylvania, United States
Greg C. Hartman
Affiliation:
[email protected], University of Pittsburgh, Mechanical Engineering and Materials Science, Pittsburgh, Pennsylvania, United States
Joshua Williams
Affiliation:
[email protected], University of Pittsburgh, Mechanical Engineering and Materials Science, Pittsburgh, Pennsylvania, United States
Jennifer L. Gray
Affiliation:
[email protected], University of Pittsburgh, Mechanical Engineering and Materials Science, Pittsburgh, Pennsylvania, United States
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Abstract

There are many factors that have the potential to limit significant advances in device technology. These include the ability to arrange materials at shrinking dimensions and the ability to successfully integrate new materials with better properties or new functionalities. To overcome these limitations, the development of advanced processing methods that can organize various combinations of materials at nano-scale dimensions with the necessary quality and reliability is required. We have explored using a gallium focused ion beam (FIB) as a method of integrating highly mismatched materials with silicon by creating template patterns directly on Si with nanoscale resolution. These templates are potentially useful as a means of locally controlling topography at nanoscale dimensions or as a means of locally implanting Ga at specific surface sites. We have annealed these templates in vacuum to study the effects of ion dosage on local Ga concentration and topography. We have also investigated the feasibility of creating Ga nanodots using this method that could eventually be converted to GaN through a nitridation process. Atomic force microscopy and electron microscopy characterization of the resulting structures are shown for a variety of patterning and processing conditions.

Keywords

Gaion-beam processingnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1228: Symposium KK – Nanoscale Pattern Formation , 2009 , 1228-KK12-10
Copyright
Copyright © Materials Research Society 2010

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