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Fabrication and Luminescence Properties of Monoclinic Gallium Oxide (β-Ga2O3) Nanostructures

Published online by Cambridge University Press:  01 February 2011

Aurangzeb Khan ,
Wojciech M. Jadwisienczak ,
Henryk J. Lozykowski  and
Martin E. Kordesch
Aurangzeb Khan
Affiliation:
[email protected], Ohio University, Department of Physics and Astronomy, 251B Clippinger labs, Athens, OH, 45701, United States
Wojciech M. Jadwisienczak
Affiliation:
[email protected], Ohio University, School of Electrical Engineering & Computer Science, Athens, OH, 45701, United States
Henryk J. Lozykowski
Affiliation:
Ohio University, School of Electrical Engineering & Computer Science, Athens, OH, 45701, United States
Martin E. Kordesch
Affiliation:
[email protected], Ohio University, Physics and Astronomy, 251B Clippinger labs, Athens, OH, 45701, United States
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Abstract

β-Ga2O3 nanostructures including nanowires, nanorods, nano and micro-pillars, nanosheets and nanobelts were successfully fabricated by simple and efficient thermal evaporation and condensation technique under argon flow.. The structures have been investigated by the electron microscope, XRD and EDX techniques and shown that nanostructures are predominatly β-Ga2O3 without other crystallographic phases. Cathodouminescence of as-grown nanostructures was investigated in the 10-300 K temperature range and exhibit luminescence band centered at 485 nm at 300 K due to donor-acceptor pair recombination. A new luminescence band centered at 387 nm developes at temperature below 150 K due to self-trapped exciton recombination.

Keywords

nanostructureluminescencesemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 951: Symposium E – Nanofunctional Materials, Nanostructures and Novel Devices for Biological and Chemical Detection , 2006 , 0951-E09-42
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Zhang, J., Liu, Z., Lin, C. and Lin, J., J Cryst Growth 280, 99 (2005).Google Scholar
2. Zhang, J., Jiang, F., Chemical Physics, 289, 243 (2003).Google Scholar
3. Hu, J., Li, Q., Meng, X. M., Lee, C. S., and Lee, S. T., J. Phys. Chem. B 106, 9536 (2002).Google Scholar
4. Liang, C. H., Meng, G. W., Wang, G. Z., Wang, Y. W., Zhang, L.D., Zhang, S.Y, Appl. Phys. Lett. 78, 3202 (2001).Google Scholar
5. Harwig, T., Kellendonk, F., J. Solid State Chem. 24, 255 (1978).Google Scholar
6. Vasil'tsiv, V. I., Zakharko, Ya. M., Prim, Ya I., Ukr. Fiz. Zh. 33, 1320 (1988).Google Scholar
7. Khan, A., Jadwisienczak, W. M., Kordesch, M. E., Physica E 35, 207 (2006).Google Scholar
8. Jadwisienczak, W. M., Lozykowski, H. J., Perjeru, F., Chen, H., Kordesch, M., and Brown, I., Appl. Phys. Lett. 76, 3376 (2000).Google Scholar
9. Yu, D. P., Lee, C. L., Bello, I., Sun, X. S., Tang, Y. H., Zhou, G. W., Bai, Z. G., Zhang, Z., Feng, S. Q., Solid State Commun. 105, 403 (1998).Google Scholar
10. Villora, E. G., Hatanaka, K., Odaka, H., Sugawara, T., Miura, T., Fukumura, H. and Fukuda, T., Solid State Commun. 127, 385 (2003).Google Scholar
11. Kim, N. H., Kim, H. W., Applied Surface Science 242, 29 (2005).Google Scholar
12. Cho, S., Lee, J., Park, I.Y., and Kim, S., Materials Letters 57, 1004 (2002).Google Scholar