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Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

Published online by Cambridge University Press:  10 February 2011

Keishi Nishio ,
Jirawat Thongrueng ,
Yuichi Watanabe  and
Toshio Tsuchiya
Keishi Nishio
Affiliation:
Dep. of Materials Sci. and Tech. Science University of Tokyo, Noda Chiba, 278-8510, JAPAN
Jirawat Thongrueng
Affiliation:
Dep. of Materials Sci. and Tech. Science University of Tokyo, Noda Chiba, 278-8510, JAPAN
Yuichi Watanabe
Affiliation:
Dep. of Materials Sci. and Tech. Science University of Tokyo, Noda Chiba, 278-8510, JAPAN
Toshio Tsuchiya
Affiliation:
Dep. of Materials Sci. and Tech. Science University of Tokyo, Noda Chiba, 278-8510, JAPAN
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Abstract

Abstruct

We succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 181
Copyright
Copyright © Materials Research Society 2000

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