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Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

Published online by Cambridge University Press:  01 February 2011

Jesse S. Jur ,
Ginger D. Wheeler ,
Matthew T. Veety ,
Daniel J. Lichtenwalner ,
Douglas W. Barlage  and
Mark A. L. Johnson
Jesse S. Jur
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States, 919-515-6174, 919-515-3027
Ginger D. Wheeler
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Matthew T. Veety
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
Daniel J. Lichtenwalner
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Douglas W. Barlage
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695, United States
Mark A. L. Johnson
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 3000 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
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Abstract

High-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSFET devices (ns > 4×1013 cm−2) offer significant performance advantages, such as greater efficiency and scalability, as compared to heterojunction field effect transistor (HFET) devices for use in high power and high frequency GaN-based devices. High leakage current and current collapse at high drive conditions suggests that the use of a high-κ insulating layer is principle for enhancement-mode MOSFET development. In this work, rare earth oxides (Sc, La, etc.) are explored due to their ideal combination of permittivity and high band gap energy. However, a substantial lattice mismatch (9-21%) between the rare earth oxides and the GaN substrate results in mid-gap defect state densities and growth dislocations. The epitaxial growth of the rare earth oxides by molecular beam epitaxy (MBE) on native oxide passivated-GaN is examined in an effort to minimize these growth related defects and other growth-related limitations. Growth of the oxide on GaN is characterized analytically by RHEED, XRD, and XPS. Preliminary MOS electrical analysis of a 50 Å La2O3 on GaN shows superior leakage performance as compared to significantly thicker Si3N4 dielectric.

Keywords

III-Vepitaxyoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C08-02
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Matocha, K. and Gutmann, R. IEEE Transactions on Electron Devices, vol. 52, pp. 6–10, 2005.Google Scholar
[2] Kambayashi, H. Niiyama, Y. Ootomo, S. Nomura, T. Iwami, M. Satoh, Y. Kato, S. and Yoshida, S. IEEE Electron Device Letters, vol. 28, pp. 1077–1079, 2007.Google Scholar
[3] Robertson, J. and Falabretti, B. Journal of Applied Physics, vol. 100, pp., 2006.Google Scholar
[4] Kwo, J. Hong, M. Busch, B. Muller, D. A. Chabal, Y. J. Kortan, A. R. Mannaerts, J. P. Yang, B. Ye, P. Gossmann, H. Sergent, A. M. Ng, K. K. Bude, J. Schulte, W. H. Garfunkel, E. and Gustafsson, T. Journal of Crystal Growth, vol. 251, pp. 645–650, 2003.Google Scholar
[5] Xue, D. Betzler, K. and Hesse, H. Journal of Physics-Condensed Matter, vol. 12, pp. 3113–3118, 2000.Google Scholar
[6] Yamamoto, T. Izumi, Y. Hashimoto, H. Oosawa, M. and Sugita, Y. Japanese Journal Of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 45, pp. 6196–6202, 2006.Google Scholar
[7] Adachi, G. and Imanaka, N. Chemical Reviews, vol. 98, pp. 1479–1514, 1998.Google Scholar
[8] Herrero, A. M. Gila, B. P. Abernathy, C. R. Pearton, S. J. Craciun, V. Siebein, K. and Ren, F. Applied Physics Letters, vol. 89, 2006.Google Scholar
[9] Johnson, J. W. Luo, B. Ren, F. Gila, B. P. Krishnamoorthy, W. Abernathy, C. R. Pearton, S. J. Chyi, J. I. Nee, T. E. Lee, C. M. and Chuo, C. C. Applied Physics Letters, vol. 77, pp. 3230–3232, 2000.Google Scholar
[10] Nieminen, M. Putkonen, M. and Niinisto, L. Applied Surface Science, vol. 174, pp. 155–165, 2001.Google Scholar
[11] Lichtenwalner, D. J. Jur, J. S. Kingon, A. I. Agustin, M. P. Yang, Y. Stemmer, S. Goncharova, L. V. Gustafsson, T. and Garfunkel, E. Journal of Applied Physics, vol. 98, 2005.Google Scholar
[12] Chen, J. Gila, B. Hlad, M. Gerger, A. Ren, F. Abernathy, C. and Pearton, S. Applied Physics Letters, vol. 88, 2006.Google Scholar
[13] Imanaka, N. Masui, T. and Kato, Y. Journal of Solid State Chemistry, vol. 178, pp. 395–398, 2005.Google Scholar
[14] Scheel, H. J. and Fukuda, T. Crystal Growth Technology, 1ed. Chichester West Sussex, England: John Wiley and Sons, 2003.Google Scholar