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Electronic Structure of VO2 near Phase Transition by Tunneling Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Changman Kim ,
Yasushi Oikawa ,
Takashi Tamura ,
Jae-Soo Shin  and
Hajime Ozaki
Changman Kim
Affiliation:
[email protected], Waseda Univisity, 3-4-1 Ohkubo, Shinjuku-ku, Tokyou, 169-8555, Japan, 042-342-0822
Yasushi Oikawa
Affiliation:
[email protected], Waseda Univisity
Takashi Tamura
Affiliation:
[email protected], Waseda Univisity
Jae-Soo Shin
Affiliation:
[email protected], Daejeon University
Hajime Ozaki
Affiliation:
[email protected], Waseda Univisity
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Abstract

Tunneling spectroscopy was carried out on W doped VO2 single crystal in the temperature region across the phase transition. Double pseudo gap structures were observed across the Fermi level at temperatures below the phase transition. When the temperature was increased across the phase transition, the outer gap structure disappeared and the inner gap structure of about 0.36 eV became sharp. A precursor of phase transition to low temperature phase was observed in the tunneling density of states near the Fermi level, when the temperature approached 0.2 K to the threshold of transition in the electrical resistivity.

Keywords

electronic structuremetal-insulator transitionoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 888: Symposium V – Materials and Devices for Smart Systems II , 2005 , 0888-V06-15
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Morin, F. J., Phys. Rev. Lett. 3, 34 (1959).Google Scholar
2. Goodenough, John B., J. Solid State Chem. 3, 490 (1971).Google Scholar
3. Dachuan, Yin, Niankan, Xu, Jingyu, Zhang and Xiulin, Zheng, J. Phys. D: Appl. Phys. 29, 1051 (1996).Google Scholar
4. Okazaki, Kozo, Fujimori, Atsushi and Onoda, Masashige, J. Phys. Soc. Jpn. 71, 822 (2002).Google Scholar
5. Kim, Ju-Jin, Yamaguchi, W., Hasegawa, T. and Kitazawa, K., Phys. Rev. Lett. 73, 2103 (1994).Google Scholar
6. Miyahara, Y, Bando, H and Ozaki, H, J. Phys.: Condens. Matter 8, 7453 (1996).Google Scholar
7. Shin, S., Suga, S., Taniguchi, M., Fujisawa, M., Kanzaki, H., Fujimori, A.. Daimon, H., Ueda, Y., Kosuge, K., and Kachi, S., Phys. Rev. B 41, 4993 (1990).Google Scholar
8. Oshio, Takanori, Sakai, Yoshiyuki, Moriya, Tohru and Ehara, Shaw, Ultramicroscopy 42–44, 744 (1992).Google Scholar
9. Chang, Y. J., Koo, C. H., Yang, J. S., Kim, Y. S., Kim, D. H., Lee, J. S., Noh, T. W., Kim, Hyun-Tak, Chae, B. G., Thin Solid Films 486, 46 (2005).Google Scholar
10. Horlin, T., Niklewski, T. and Nygren, M., Mat. Res. Bull 7, 1515 (1972).Google Scholar
11. Savberg, O., Nygren, M., Phys. Status Solidi (a) 43, 645 (1977).Google Scholar