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Electrical Resistivity of an Al-Re-Si Cubic Approximant Phase and Role of Local Environment in Electronic Transport

Published online by Cambridge University Press:  17 March 2011

Ryuji Tamura ,
Takayuki Asao ,
Mutsuhiro Tamura  and
Shin Takeuchi
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Takayuki Asao
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Mutsuhiro Tamura
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
Shin Takeuchi
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278-8510, Japan
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Abstract

In order to gain an insight into the role of the local atomic environment in the electronic transport of the icosahedral quasicrystal, the electrical resistivity of α-AlReSi, which is the (1/1,1/1,1/1) approximant of the icosahedral phase, has been investigated. Very high resistivity and its pronounced negative temperature dependence have been observed, indicating that the electronic states of the 1/1 cubic approximant are quite similar to those of icosahedral phases. In order to further elucidate which structural entity is responsible for such anomalous transport, a comparison of the electrical resistivity between (1/1,1/1,1/1) and (1/0,1/0,1/0) approximants has been made. The typical transport behavior of icosahedral phases which is also seen in 1/1 and higher-order approximants was not observed in any of the studied 1/0 cubic approximants. The result can be regarded as an implication that the intercluster distance between the TM clusters plays a significant role in the confinement of electronic states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 643: Symposium K – Quasicrystals-Preparation, Properties, and Applications , 2000 , K13.3
Copyright
Copyright © Materials Research Society 2001

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