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DX-centers in CdTe and ZnTe Observed by Locally Sensitive Probe Atoms

Published online by Cambridge University Press:  01 February 2011

S. Lany ,
H. Wolf  and
Th. Wichert
S. Lany
Affiliation:
Technische Physik, Universität des Saarlandes, 66041 Saarbrücken, Germany
H. Wolf
Affiliation:
Technische Physik, Universität des Saarlandes, 66041 Saarbrücken, Germany
Th. Wichert
Affiliation:
Technische Physik, Universität des Saarlandes, 66041 Saarbrücken, Germany
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Abstract

Heavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanism in the Cd (Zn) rich regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B1.3
Copyright
Copyright © Materials Research Society 2003

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