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Development of Flexible Photo Sensor and Memory Devices Based on Organic Photo FET

Published online by Cambridge University Press:  26 February 2011

Manabu Yoshida ,
Hiroki Kawai ,
Takeshi Kondoh ,
Takeshi Kawai ,
Kouji Suemori ,
Sei Uemura ,
Satoshi Hoshino ,
Takehito Kodzasa  and
Toshihide Kamata
Manabu Yoshida
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan, +81-29-861-4516, +81-29-861-4536
Hiroki Kawai
Affiliation:
[email protected], Tokyo University of Science, Faculty of Engineering, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo, 162-8601, Japan
Takeshi Kondoh
Affiliation:
[email protected], Tokyo University of Science, Faculty of Engineering, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo, 162-8601, Japan
Takeshi Kawai
Affiliation:
[email protected], Tokyo University of Science, Faculty of Engineering, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo, 162-8601, Japan
Kouji Suemori
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device Group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Sei Uemura
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device Group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Satoshi Hoshino
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device Group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Takehito Kodzasa
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device Group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Toshihide Kamata
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Organic Semiconductor Device Group, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
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Abstract

The photo FET having a photosensitive insulator layer showed excellent photo-switching properties upon illuminating the gate dielectric layer, because the gate capacitor was rapidly charged up by providing a large amount of photo-generated charges in the dielectric layer to the gate capacitor. In this study, we have tried to give a memory function to the photo FET. Further, we have tried to fabricate flexible photo FETs by using only solution processes in order to utilize the photo FET as flexible photo sensor and photo memory devices. As a result, we have succeeded in observing the memory effect of the photo FET and the photo-switching behavior of the flexible photo FETs

Keywords

organicphotoconductivitydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S10-09
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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