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Design, Actual Performance, and Electrical Stability of CISCuT-Based Quasi-Endless Solar Cell Tapes

Published online by Cambridge University Press:  21 March 2011

Michael Winkler
Affiliation:
IST – Institut für Solartechnologien, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany
Jürgen Penndorf
Affiliation:
IST – Institut für Solartechnologien, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany
Joachim Griesche
Affiliation:
IST – Institut für Solartechnologien, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany
Igor Konovalov
Affiliation:
IST – Institut für Solartechnologien, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany
Olaf Tober
Affiliation:
IST – Institut für Solartechnologien, Im Technologiepark 7, 15236 Frankfurt (Oder), Germany
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Abstract

Solar cells based on Cu-In-S-phase absorber layers on a quasi-endless copper tape were made in a series of consecutive roll-to-roll processes, for which a base line has recently been set up. The so called “as grown cell absorber”, which consists of a stack of CuIn5S8 and CuInS2 layers, is completed to a solar cell by a CuI buffer layer of about 70 nm thickness and a 1 μm thick ZnO-TCO window layer. The design of the whole cell including the phase constitution of the absorber layer and the actual standard electrical characteristics will be presented. Considering the first stability tests and the experimental possibilities of the base line, an outlook will be given concerning the ability and perspectives of using these cell tapes for module production.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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