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Defect Reduction by Tilted Zone Crystallization of Patterned Silicon Films on Fused Silica

Published online by Cambridge University Press:  22 February 2011

L. E. Fennell ,
M. D. Moyer ,
D. K. Biegelsen ,
A. Chiang  and
N. M. Johnson
L. E. Fennell
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
A. Chiang
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
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Abstract

It is well known that crystal growth and defect propagation occur along the local thermal gradient at a liquid - solid interface, It is shown here that this property can be used to greatly reduce the density of structural defects in zone crystallized silicon thin films on amorphous substrates, A solidification front perpendicular to the direction of zone motion has its in - plane component of the thermal gradient parallel to the direction of zone motion. In this case, the defects, once nucleated, propagate along this zone path and the defect density reaches a steady state value. By using striped polysilicon patterning and a solidification front tilted relative to the molten zone path, a defect-free region is shown to occur. It is also shown that defects, once nucleated, are swept laterally from the region of interest and are terminated at the stripe boundary Methods of forming a tilted interface are proposed and demonstrated for CO2 laser crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 403
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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