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The Debye Temperature for Hydrothermally Grown ThO2 Single Crystals

Published online by Cambridge University Press:  21 August 2013

Tony D. Kelly
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, U.S.A.
James C. Petrosky
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, U.S.A.
John W. McClory
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, U.S.A.
Timothy Zens
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, U.S.A.
David Turner
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, 2950 Hobson Way, WPAFB, OH 45433, U.S.A.
J. Matthew Mann
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, U.S.A.
Joseph W. Kolis
Affiliation:
Department of Chemistry and Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University, Clemson, SC 29634-0973, U.S.A.
Juan A. Colón Santana
Affiliation:
Dept. of Physics and Astronomy, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, U.S.A.
Peter A. Dowben
Affiliation:
Dept. of Physics and Astronomy, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, U.S.A.
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Abstract

The electronic properties of ThO2 single crystals were studied using x-ray photoemission spectroscopy (XPS). The XPS results show that the Th 4f core level is in an oxidation state that is consistent with that expected for Th in ThO2. The effective Debye temperature is estimated from the temperature dependent photoemission intensities of the Th 4f core level over the temperature range of 290 to 360 K. A Debye temperature of 468±32 K has been determined.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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