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Crystal growth of photovoltaic polycrystalline Si1-xGex by die-casting growth

Published online by Cambridge University Press:  01 February 2011

H. Hirahara ,
T. Iida ,
Y. Sugiyama ,
T. Baba ,
Y. Takanashi  and
S. Sakuragi
H. Hirahara
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Sugiyama
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
T. Baba
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
Y. Takanashi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278–8510, Japan
S. Sakuragi
Affiliation:
Union Material Inc., 1640 Oshido-jyoudai, Tone-Machi, Kitasouma, Ibaraki 300–1602, Japan
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Abstract

Coin-shaped multicrystalline Si1-xGex crystals were grown using a Brigdman method combined with die-casting growth. Si1-xGex alloy is known as a candidate material for producing Auger generation, which creates more than one electron/hole pair per absorbed photon. Since Si1-xGex alloy shows a complete series of solid solutions, precipitating crystals with a certain composition of silicon or germanium by conventional selective growth methods is burdensome. Using die-casting combined with Bridgman growth brought about Si1-xGex precipitation in a form completely different from that predicted by the Si-Ge phase diagram. By combining this growth with subsequent heat treatment of the precipitated Si1-xGex sample, Si1-xGex (x= 0.5 ± 3 %) could be obtained. Indirect band-gap energy was estimated by measuring room-temperature optical absorption coefficient of the grown samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.44
Copyright
Copyright © Materials Research Society 2005

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References

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