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Correlation of Film Quality and Hydrogen NMR Resonance Shifts in a-Si:D,H; a-Ge:D,H; and a-SiGe:D,H

Published online by Cambridge University Press:  15 February 2011

R. E. Norberg ,
Y. W. Kim ,
P. H. Chan ,
J. R. Bodart ,
M. J. Kernan ,
D. J. Leopold ,
P. A. Fedders ,
W. A. Turner  and
W. Paul
R. E. Norberg
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
Y. W. Kim
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
P. H. Chan
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
J. R. Bodart
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
M. J. Kernan
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
D. J. Leopold
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, MO 63130
W. A. Turner
Affiliation:
Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Harvard University, Cambridge, MA 02138
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Abstract

A systematic study of both proton and deuteron NMR in hydrogenated amorphous silicon films has revealed significant resonance shifts among various resolved components. The shifts include both paramagnetic and diamagnetic displacements of resolved spectral features from trapped molecular hydrogens. The shifts depend on film quality and deposition conditions. Some of the shifts vary as 1/T and reflect Curie susceptibilities characteristic of local regions of differing dangling bond densities. Spectra from relatively immobile hydrogen molecules trapped in nanovoids are shifted diamagnetically and broadened as temperature decreases. Hydrogens tightly bound to Si do not show similar changes and thus are more remote from dangling bonds and other magnetic defects. Similar spectrally-resol ved shifts have been observed in a-Ge and a-SiGe films and are correlated with film photovoltaic quality as measured by mobility-lifetime products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 179
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Boyce, J. B. and Stutzmann, M., Phys. Rev. Lett. 54, 562 (1985).Google Scholar
2. Carlos, W. E. and Taylor, P. C., Phys. Rev. Lett. 45, 358 (1980).Google Scholar
3. Zhou, D. and Sullivan, N. S., Physica B194–196, 957 (1994).Google Scholar
4. Kernan, M. J., et al, this proceedings manuscript A15.2Google Scholar