Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T13:16:13.808Z Has data issue: false hasContentIssue false
  • English
  • Français

The Control of Zn for ZST Microwave Ceramics With Low Sintering Temperature

Published online by Cambridge University Press:  10 February 2011

Yong H. Park ,
Moo Y. Shin ,
Ji M. Ryu  and
Kyung H. Ko
Yong H. Park
Affiliation:
Dept of MS&E, Ajou Univ., Suwon 442-749, [email protected]
Moo Y. Shin
Affiliation:
Dept of MS&E, Ajou Univ., Suwon 442-749, Korea
Ji M. Ryu
Affiliation:
Dept of MS&E, Ajou Univ., Suwon 442-749, Korea
Kyung H. Ko
Affiliation:
Dept of MS&E, Ajou Univ., Suwon 442-749, Korea
Get access

Abstract

ZnO addition for low-T sintering of ZST has serious side effects such as decrease of Q × f value. In this work, the curing of these side effects without any further chemical additivesand causing degradation of other dielectric properties have been presented. After sintered at 1350°C for 2h. samples were annealed in oxygen at 900 ∼ 1100°C for 5hr. It was observed that Q × f value of post-annealed sample at 900°C could recovered up to 46000 from the as-sintered value of 40000. Because there were no formations of second phases or significant changes inlattice constants, which could affect microwave properties of ZST. However, it was found that only for the specimens annealed at 900°C, Zn was almost depleted from grin inside and diffused toward grain boundary. So, it is suggested that the out-diffusion of Zn is responsible for the recovery of Q × f value. Moreover, when the amount of Zn incorporation increased via successive calcination and sintering of pre-mixed powder of ZST and ZnO, Q × f value of 33000 also could enhanced up to 39000 due to the redistribution of Zn near grain boundary by out-diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 292
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Wersing, W., in Electronic Ceramics, edited by Steele, B. C. H. (Elsevier A. A., London and New York, 1991), pp. 76–83.Google Scholar
2 Wakino, K., Nishikawa, T., Ishikawa, Y. and Tamura, H., Br. Ceram. Trans. 89, 39 (1990).Google Scholar
3 McHale, A. E. and Roth, R. S., J. Am. Ceram. Soc. 66 (2), C–18 (1983).Google Scholar
4 Kudensia, R., McHale, A. E. and Snyder, R. L, J. Am. Ceram. Soc. 77 (12), 3215 (1983).Google Scholar
5 Han, K. R., Jang, J. W., Cho, S. Y., Jeong, D. Y. and Hong, K. S., J. Am. Ceram. Soc. 81 (5). 1209 (1998).Google Scholar
6 Takada, T., Wang, S. F., Yoshikawa, S., Jang, S. J. and Newnham, R. E., J. Am. Ceram. Soc. 77 (9), 2485 (1994).Google Scholar
7 Michiura, N., Tatekawa, T., Higuchi, Y and Tamura, H., J. Am. Ceram. Soc. 78 (3), 793 (1995).Google Scholar
8 Youn, K. H., Kim, Y. S. and Kim, E. S., J. Mater. Res. 10 (8), 2085 (1995).Google Scholar
9 Wakino, K., Minai, K. and Tamura, H., J. Am. Ceram.Soc. 67 (4), 278 (1984).Google Scholar
10 Youn, K. H. and Kim, E. S., Mater. Res. Bull. 30 (7), 813 (1995).Google Scholar
11 Hirano, S., Hayashi, T. and Hattori, A., J. Am. Ceram. Soc. 74 (6), 1320 (1991).Google Scholar