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Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis+
Published online by Cambridge University Press: 26 February 2011
Abstract
Variable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.
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- Copyright © Materials Research Society 1987
Footnotes
Supported by NASA Lewis Grant NAG-3–154, and the Naval Air Systems Command.
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