Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-12T09:31:15.639Z Has data issue: false hasContentIssue false
  • English
  • Français

The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

Published online by Cambridge University Press:  10 February 2011

A. O. Evwaraye ,
S. R. Smith  and
W. C. Mitchel
A. O. Evwaraye
Affiliation:
Materials Directorate, MLPO, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, 45422–7077. U.S. A
S. R. Smith
Affiliation:
University of Dayton, Physics Department, 300 College Park, Dayton, Ohio 45469–2314
W. C. Mitchel
Affiliation:
University of Dayton Research Institute, 300 College Park. Dayton, Ohio 45469–0167
Get access

Abstract

Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition ( CVD) grown thin films and in sublimation sandwich method ( SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations ( ND − NV ) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 237
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anikin, M.M., Dmitriev, V. A., and Chelnokov, V. E.,176 Meeting of Electrochem. Society (Hollywood FL )Google Scholar
2. Ivanov, P.A. and Chelnokov, V. E., Semicond. Sci. Technol. 7, 863, (1992)10.1088/0268-1242/7/7/001Google Scholar
3. Evwaraye, A. O., Smith, S. R.. and Mitchel, W. C., J. Appl. Phys. 79,7726, ( 1996)10.1063/1.362376Google Scholar
4. Gotz, W., Schoner, A., Pensi, G., Suttrop, W., Choyke, W. J., Stein, R., and Leibenzeder, S, J. Appl. Phys. 73, 3332 ( 1993)10.1063/1.352983Google Scholar
5. Evwaraye, A. O., Smith, S. R., Skowronski, M., and Mitchel, W. C., J. Appl. Phys. 75, 3472 ( 1994)10.1063/1.356108Google Scholar
6. Losee, D. L., J. Appl. Phys. 46, 2204(1975) see also A. 0. Evwaraye, Smith, S. R., and Mitchel, W. C., J. Appl. Phys. 75, 3472 (1994)10.1063/1.321865Google Scholar
7. Mitchel, W. C., Evwaraye, A. O., Smith, S. R., and Roth, M. D., J. Electron. Mater. 26,113 1997)10.1007/s11664-997-0135-3Google Scholar