Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-12-01T03:47:37.874Z Has data issue: false hasContentIssue false
  • English
  • Français

C-Axis Oriented Lithium Niobate Films on (001) Magnesium Oxide by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

J. L. Lacey  and
D. G. Schlom
J. L. Lacey
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005, [email protected]
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005, [email protected]
Get access

Abstract

For the first time, epitaxial c-axis oriented lithium niobate (LiNbO3) films were grown on MgO (001) substrates. This orientation is relevant to the monolithic integration of LiNbO3 with GaAs for waveguiding, frequency doubling, and other opto-electronic applications. The epitaxial orientation relationship is (001 ) LiNbO3 parallel to (001) MgO and [100] LiNbO3 parallel to [110] MgO. Four equivalent in-plane orientations were observed, such that the lithium or niobium atoms along the [100] axis of LiNbO3 are bonded to the oxygen atoms on diagonal comers of the MgO unit cell. These epitaxial films were prepared by off-axis pulsed laser deposition at substrate temperatures of 775–800 °C in a 15–50 mTorr mixture of 5% O3 in O2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 393
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fork, D. K. and Anderson, G. B., “Epitaxial MgO on GaAs (111) as a Buffer Layer for Z-Cut Epitaxial Lithium Niobate,” Applied Physics Letters, 63 ‘8’ 1029–1031(1993).Google Scholar
2. Pezeshki, B., Kash, J.A., Kisker, D.W., Tong, F., “Asymmertric Waveguide Couplers,” Applied Physics Letters, 65 [10] 138–143 (1994).Google Scholar
3. Fork, D. K. and Anderson, G. B., “Laser Deposited Epitaxial Oxide Heterostructures as Prototype Ferroelectric Optical Waveguides,” Materials Research Society Symposium Proceedings, Vol.285 (1993) pp. 355–360.Google Scholar
4. Fork, D. K., Nashimoto, K., and Geballe, T. H., “Epitaxial Yba2Cu3O7-x on GaAs(001) Using Buffer Layers,” Applied Physics Letters, 60 [13] 1621–1623 (1992).Google Scholar
5. Hsu, Wei-Yung and Raj, Rishi, “MgO Epitaxial Thin Films on (100) GaAs as a Substrate for the Growth of Oriented PbTiO3 ,” Applied Physics Letters, 60 [25] 3105–3107 (1992).Google Scholar
6. Chang, L. D., Tseng, M. Z., Hu, E. L., Fork, D. K., “Epitaxial Buffer Layers for Yba2Cu3O7-x Thin Films on GaAs,” Applied Physics Letters, 60 [14] 1753–1755 (1992).Google Scholar
7. Fork, D. K., Nashimoto, K., and Geballe, T. H., “Epitaxial Yba2Cu3O7-x on GaAs(001) Using Buffer Layers,” Applied Physics Letters, 60 [13] 1621–1623 (1992).Google Scholar
8. Nashimoto, K., Fork, D. K., and Geballe, T., “Epitaxial Growth of MgO on GaAs(001) for Growing Epitaxial BaTiO3 Thin Films by Pulsed Laser Deposition,” Applied Physics Letters, 60 [10] 1199–1201 (1992).Google Scholar
9. Hung, L. S., Zheng, L. R., and Blanton, T. N., “Epitaxial Growth of MgO on (100)GaAs using Ultrahigh Vacuum Electron Beam Evaporation,” Applied Physics Letters, 60 [25] 3129–3131 (1992).Google Scholar