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Boron Doping Effects in Microcrystalline Silicon

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer ,
Lars Niessen  and
Frank Pennartz
Wolfhard Beyer
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF-5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany, ++492461613925, ++492461613735
Lars Niessen
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF-5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Frank Pennartz
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF-5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
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Abstract

Conditions leading to high conductivities (up to 300 S/cm) in chlorosilane-based boron-doped microcrystalline Si:Cl:H films are investigated. It is found that the high conductivity originates primarily from the growth of highly crystalline material with a high concentration of boron. Furthermore, these films grow with relatively low chlorine and hydrogen concentrations of a few percent and, according to effusion measurements of hydrogen and implanted helium, in a relatively compact structure. At a boron doping level of 1%, admixture of 10% silane to the tetrachlorosilane results in the growth of amorphous material of low conductivity while for admixture of up to 90% of silicontetrafluoride, microcrystalline Si films with high conductivities can be grown.

Keywords

Sidopantplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A07-07
Copyright
Copyright © Materials Research Society 2007

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