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Au/n-ZnO Rectifying Contacts Fabricated with Hydrogen Peroxide Pre-treatment

Published online by Cambridge University Press:  01 February 2011

Qilin Gu ,
Chi-Chung Ling ,
Chor-Keung Cheung ,
Jiaming Luo ,
Xudong Chen ,
Aleksandra Djurisic ,
Gerhard Brauer ,
Wolfgang Anwand ,
Wolfgang Skorupa  and
Helfried Reuther
...Show all authors
Qilin Gu
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Rm 417B, CYM Physics Building, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong, N/A, Hong Kong
Chi-Chung Ling
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Chor-Keung Cheung
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Jiaming Luo
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Xudong Chen
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Aleksandra Djurisic
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Gerhard Brauer
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Wolfgang Anwand
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Wolfgang Skorupa
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Helfried Reuther
Affiliation:
[email protected], Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Hock-Chun Ong
Affiliation:
[email protected], The Chinese University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
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Abstract

Au contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with boiling organic solvent pre-treatment were found to have ohmic behavior.For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property.Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment.Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts.

Keywords

defectssemiconductingx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-15
Copyright
Copyright © Materials Research Society 2007

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