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Assembly of Fine-Pitch Carbon Nanotube Bundles for Electrical Interconnect Applications

Published online by Cambridge University Press:  01 February 2011

Lingbo Zhu ,
Dennis W Hess  and
ChingPing Wong
Lingbo Zhu
Affiliation:
[email protected], Georgia Institute of Technology, School of Materials Science and Engineering, 771 Ferst Drive, Atlanta, GA, 30332, United States
Dennis W Hess
Affiliation:
[email protected], Georgia Institute of Technology, School of Chemical and Biomolecular Engineering, Atlanta, GA, 30332, United States
ChingPing Wong
Affiliation:
[email protected], Georgia Institute of Technology, School of Materials Science and Engineer ing, Atlanta, GA, 30332, United States
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Abstract

Carbon nanotubes (CNTs) have been proposed as electrical interconnects, due to their excellent properties. However, the current nanotube growth techniques suffer from several drawbacks. One of the main challenges for applying CNTs to the circuitry is the high growth temperature (>600°C). Such temperatures are incompatible with microelectronic processes. The other issue is the poor adhesion between CNTs and the substrates, which will result in long term reliability issues and high contact resistance. To overcome these disadvantages, we have successfully demonstrated a methodology that we term “CNT transfer technology”. The distinctive CNT-transfer-technology features are separation of CNT growth and CNT device assembly at solder reflow temperature. In this paper, we combined our expertise in growth of well-aligned open-ended CNT bundles with the CNT transfer process to assemble CNT bundles for fine-pitch interconnects applications. To demonstrate the feasibility of transfer process to assemble the fine-pitch CNT bundles, the CNT bundles with diameter, aspect-ratio and pitch of 25 μm, 4, and 80 μm, respectively, were assembled on the copper substrates. The measured resistivity of the long CNTs is ∼2.3×10−4 Ω-cm. The CNT-solder alloy interfaces were observed by the SEM. The results indicated that molten SnPb solder form strong mechanical bonding with open-ended CNTs, suggesting the superior CNT/solder interfacial properties by solder reflow process.

Keywords

microelectronicschemical vapor deposition (CVD) (chemical reaction)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B10-01
Copyright
Copyright © Materials Research Society 2007

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References

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