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Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization

Published online by Cambridge University Press:  26 February 2011

J. Arokiaraj ,
S. Vicknesh  and
A. Ramam
J. Arokiaraj
Affiliation:
A * STAR Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. Vicknesh
Affiliation:
A * STAR Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
A. Ramam
Affiliation:
A * STAR Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Abstract

A method to bond directly Indium Phosphide to Indium phosphide at low temperatures has been realized. The treatment of wafers in HF and oxygen plasma exposure prior to bonding is helpful in activating the surface of the wafers at room temperature. This surface activation is useful to bond the wafers at room temperature. Further higher temperature (220°C) treatment with pressure, aided in the completion of the wafer bonding process. The interface of the bonded structures revealed a very thin amorphous layer of oxide when examined under high resolution TEM. Cross-sectional micro Raman measurements revealed signatures corresponding to some disordered associated layer at the interface. Current-Voltage characteristics exhibited ohmic conduction across the interface. The wafer bonding method developed would serve as a useful tool for the fabrication of photonic and optoelectronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.14
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Mitsuru, Y., Katsuya, A., Masahiro, I. and Susumu, N., Jpn. J. Appl. Phys., 40, L847 (2001)Google Scholar
2. Tokuda, T. and Susumu, N., Jpn. J. Appl. Phys., 39, L572 (2000)Google Scholar
3. Shi, Frank, Chang, Kuo-Lih, Epple, John, Xu, Chao-Feng, Cheng, K. Y., and Hsieh, K. C., J. Appl. Phys. 92, 7544–7549 (2002)Google Scholar
4. Hinrich, K., Schierhorn, A., Haier, P., Esser, N., Richter, W. and Sahm, J., Physical Review Letters, 79, 1094–1097(1997)Google Scholar
5. Hunermann, M., Geurts, J, and Richter, W., Physical Review Letters, 66, 640 (1991)Google Scholar
6. Bedel, E., Landa, G., Carles, R., Redoules, J.P. and Renucci, J. B., J. Phy. C 19, 1471 (1986)Google Scholar
7. Liau, Z. L. and Mull, D.E., Appl. Phys. Lett, 56, 737 (1990)Google Scholar
8. Wada, H., Ogawa, Y., and Kamijoh, T., Appl. Phys. Lett, 62, 738 (1993)Google Scholar