Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T06:48:33.419Z Has data issue: false hasContentIssue false

Anchoring of Organic Molecules on Cu(001) Surface Through S-Headgroup.

Published online by Cambridge University Press:  01 February 2011

P. Monachesi
Affiliation:
Dipartimento di Fisica, Università dell'Aquila and INFM, L'Aquila (Italy)
L. Chiodo
Affiliation:
Dipartimento di Fisica, Università di Roma, ‘Tor Vergata’ and INFM, Roma (Italy)
F. Bussolotti
Affiliation:
Dipartimento di Fisica, Università di Modena and INFM CRS-S3, Modena (Italy)
M. G. Betti
Affiliation:
Dipartimento di Fisica, Università di Roma, ‘La Sapienza’ and INFM CRS-SOFT, Roma (Italy)
C. Mariani
Affiliation:
Dipartimento di Fisica, Università di Roma, ‘La Sapienza’ and INFM CRS-S3, Roma (Italy)
Get access

Abstract

We characterize, experimentally and theoretically, the electronic properties of the S/Cu(001) interface in two molecule-metal systems, Mercaptobenzoxazole(MBO) and Methanethiol on Cu(001), containing the S-headgroup. The S atom realizes the anchoring of the whole molecule to the substrate through the formation of an S-Cu hybrid, irrespective of the p(2×2) and c(2×2) reconstruction, but with different relative orbital contributions. This behaviour may be highlighted only by the comparison of the high resolution angular resolved photoemission spectra with the ab inito calculated electronic density of states of the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Norskov, J.K. and Hammer, B. in Chemisorption and Reactivity of supported clusters in thin films, ed. By Lambert, R.M. and Pacchioni, G. (Kluwer Academic, the Netherlands, 1997)Google Scholar
[2] Mariani, C., Allegretti, F., Corradini, V., Contini, G., Castro, V. D., Baldacchini, C., and Betti, M. G., Phys. Rev. B 66, 115407 (2002)Google Scholar
[3] Monachesi, P., Chiodo, L. and Sole, R. Del, Phys. Rev. B 69, 165404 (2004)Google Scholar
[4] Kondoh, H., Saito, N., Matsui, F., Yokoyama, T., Ohta, T. and Kuroda, H., J. Phys. Chem B 105, 1287 (2001)Google Scholar
[5] Vollmer, S., Witte, G. and Woell, C., Langmuir 17, 7560 (2001)Google Scholar
[6] Driver, S.M. and Woodruff, D.P., Surface Science 488, 207 (2001)Google Scholar
[7] Bussolotti, F., Corradini, V., Castro, V. Di, Betti, M.G., Mariani, C., Surface Science, 566-568, 591 (2004)Google Scholar
[8] Zeng, H.C., McFarlane, R. A., Mitchell, K.A.R., Phys. Rev. B 39, 8000 (1989)Google Scholar
[9] Wittenau, A.E. Schach von, Hussain, Z., Wand, L.Q., Huang, Z., Ji, Z.G. and Shirley, D.A., Phys. Rev. B 45, 9291 (1992)Google Scholar
[10] McGrath, R., MacDowell, A. A., Hashizume, T., Sette, F. and Citrin, P. H., Phys. Rev. Lett. 64, 575 (1990)Google Scholar
[11] Wills, J. and Cooper, B. R., Phys. Rev. B 36, 3809 (1987).Google Scholar
[12] Andersen, O. K., Phys. Rev. B 12, 3060 (1975)Google Scholar
[13] Kohn, W. and Sham, L. J., Phys. Rev. 140, A1133 (1965)Google Scholar
[14] Barth, U. von and Hedin, L., J. Phys. C 5, 1629 (1972)Google Scholar
[15] Jepsen, O. and Andersen, O. K., Solid State Comm. 9, 1763 (1971)Google Scholar