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Aluminum Nitride Chip Carrier for Micro-electro-mechanical Sensor Applications

Published online by Cambridge University Press:  11 February 2011

T. F. Marinis  and
J. W. Soucy
T. F. Marinis
Affiliation:
Draper Laboratory, 555 Technology Square, Cambridge, MA 02139–3563, U.S.A.
J. W. Soucy
Affiliation:
Draper Laboratory, 555 Technology Square, Cambridge, MA 02139–3563, U.S.A.
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Abstract

A commercially fabricated aluminum nitride chip carrier was evaluated for packaging various types of MEMS inertial sensors. They were successfully assembled and vacuum-sealed within AlN chip carriers and their pressures have remained stable for over one year. Aging tests were conducted under electrical bias at 85°C and 85 %RH. The leakage currents were not as stable as those measured in alumina chip carriers and post test inspection of the AlN parts revealed etching of the ceramic between conductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J5.18
Copyright
Copyright © Materials Research Society 2003

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References

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