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˂100˃ Single Crystal Soi Films Obtained on 4. In Wafers Using Halogen Lamps
Published online by Cambridge University Press: 28 February 2011
Abstract
By using a halogen lamp recrystalization system, we show that a patterning of the underlying oxide of SOI structures allows a high yield of localization of the remaining defects generally encountered in zone melting recrystallization. The influence of the scan speed and grain orientation on the efficiency of the entrainment is investigated. Moreover, we show that a quasi-single crystal can be obtained if a combination of seeding and oxide patterning is used.
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- Copyright © Materials Research Society 1986
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