Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-12T09:39:20.780Z Has data issue: false hasContentIssue false
  • English
  • Français

3C-SiC Buffer Layers Converted from Si at a Low Temperature

Published online by Cambridge University Press:  10 February 2011

H. M. Liaw ,
S. Q. Hong ,
P. Fejes ,
D. Werho ,
H. Tompkins ,
S. Zollner ,
S. R. Wilson ,
K. J. Linthicum  and
R. F. Davis
H. M. Liaw
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
S. Q. Hong
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
P. Fejes
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
D. Werho
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
H. Tompkins
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
S. Zollner
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
S. R. Wilson
Affiliation:
Motorola Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284, [email protected]
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Get access

Abstract

We have obtained single-crystal 3C-SiC films via conversion of the surface region of Si (111) and (100) wafers at 970 °C by reaction with C2H4 in an MBE reactor. The major defects in the films were clusters, voids, and misfit dislocations. Investigation by high resolution TEM images showed low lattice strains in the epitaxial layer due to the formation of 1 misfit dislocation for every 4 to 5 regular SiC planes that are bonded to Si at the interface. The clusters and voids often occurred in pairs. A model for forming the void-cluster pairs is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 219
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett., 42, p.460 (1982).10.1063/1.93970Google Scholar
2. Nishino, S., in “Properties of SiC”, p. 204, EMIS, Dataview Series, an Inspec Publication (1995).Google Scholar
3. Cheng, T. T., Pirouz, P., and Powell, J. A., Mat. Res. Soc. Symp. Proc. Vol. 148, p. 229 (1989)10.1557/PROC-148-229Google Scholar
4. Yoshinobu, T., Fuyuki, T. and Matsunami, H., Jap. J. Appl. Phys. 30, p.L1086 (1991).10.1143/JJAP.30.L1086Google Scholar
5. Lowlane, L. B., Tanaka, F., Kern, R. S. and Davis, R. F., J. Mats. Res. 8, p.2310 (1993).Google Scholar
6. Schmitt, J., Troffer, T., Christiansen, K., Helbig, R., Pensl, G., and Strunk, H. P., Materials Science Forum vol.264–268, pt. 1 p.247–50 Conference Title: Silicon Carbide, III-Nitrides and Related Materials. 7th International ConferenceGoogle Scholar